A light-emitting electrochemical artificial synapse with dual output of photoelectric signals

Zeng, Huaan; Chen, Qizhen; Shan, Liuting; Yan, Yujie; Gao, Changsong; Lu, Wenjie; Chen, Huipeng; Guo, Tailiang

doi:10.1007/s40843-021-2029-y

Cited by 13 publications

(15 citation statements)

References 51 publications

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“…Figure c shows the fluorescence mapping of a Si QDs/MoS 2 synaptic device, indicating that the fluorescence may facilitate device visualization. Compared with previous synaptic devices with light emission enabled by light-emitting diode (LED) − or light-emitting transistor (LET) structures, , the Si QDs/MoS 2 synaptic device has a simple structure without hole/electron transport layers. Moreover, instead of being triggered by the electrical inputs, the optically stimulated synaptic plasticity and synchronous fluorescence render advantages such as wide bandwidth, negligible RC (R = resistance, C = capacitance) delay and power loss, and global regulation of multiple synaptic devices …”

Section: Resultsmentioning

confidence: 99%

Optogenetics-Inspired Fluorescent Synaptic Devices with Nonvolatility

Wang

et al. 2023

ACS Nano

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Given the synergy of optogenetics and bioimaging in neuroscience, it is possible for light to simultaneously modulate and visualize synaptic events of optoelectronic synaptic devices, which are building blocks of a neuromorphic computing system with optoelectronic integration. Here we demonstrate the realization of the simultaneous modulation and visualization of synaptic events by using optically stimulated synaptic devices based on the heterostructure of fluorescent silicon quantum dots (Si QDs) and monolayer molybdenum disulfide (MoS 2 ). The charge-transferenabled photogating effect of the Si QDs/MoS 2 heterostructure leads to the nonvolatility of the synaptic devices, which exhibit important synaptic functionalities and synchronous fluorescence upon optical stimulation. An array of the Si QDs/MoS 2 optoelectronic synaptic devices is well-employed to mimic robust neural population coding. Defective devices in this array may be pinpointed by the absence of their fluorescence. This work has an important implication for the development of synaptic devices facilitating the system-level diagnosis and device-level positioning of a neuromorphic computing system.

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Section: Resultsmentioning

confidence: 99%

Optogenetics-Inspired Fluorescent Synaptic Devices with Nonvolatility

Wang

et al. 2023

ACS Nano

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“…This kind of EPSC behavior is similar to that of brain neurons, showing strong response and long memory for large stimuli. Paired pulse facilitation (PPF) is another typical behavior in artificial synapse, which is a short-term memory activity in neurobiology and used to decode a temporal information. − As shown in Figure d, two consecutive presynaptic pulses ( V GS = −30 V, 30 ms, an interval of 30 ms) were applied to the gate electrode and the channel current signals were collected. As a result of typical PPF activity, the channel current A 2 stimulated by the second pulse was higher than that of A 1 stimulated by the first pulse.…”

Section: Resultsmentioning

confidence: 99%

High-Performance n-Type Stretchable Semiconductor Blends for Organic Thin-Film Transistors and Artificial Synapses

An,

Dong,

et al. 2023

Chem. Mater.

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The design of high-performance stretchable n-type semiconductors is important in the construction of complementary circuits for flexible electronics. Herein, we propose a strategy by blending an electron transport-conjugated polymer poly(7,7′difluoro-N,N′-bis(6-(trioctylsilyl)hexyl)-isoindigo-alt-(E)-1,2-bis-(3,4-difluorothien-2-yl)ethene) (IID-SiC8) with a hole transport elastic block copolymer poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-block-hydrogenated hydroxyl-terminated polybutadiene (PBTTT-b-HTPB) to achieve stretchable semiconductors with high electron mobility and synaptic function in organic thin-film transistors. The p-type segments of PBTTT-b-HTPB behave as trap centers for minority holes to improve the overall performance of n-channel transistors or function as holetrapping/detrapping sites to create memory windows, depending on the blending ratio. By adding 25 wt % PBTTT-b-HTPB, the blend film exhibits mobility up to 1.71 cm 2 V −1 s −1 , which is the highest value of n-type stretchable semiconductors so far, together with a high on/off ratio of 10 6 −10 7 . Notably, the mobility of the nanofilm remains almost unchanged after 1000 stretching cycles under 100% strain due to good fatigue resistance. By adding 75 wt % PBTTT-b-HTPB, synaptic functions were realized as a response to gate voltage pulse. Neuromorphic computing simulation constructed with this synaptic transistor can conduct pattern recognition at high accuracy up to 85.00%. Our multipurpose strategy of employing a single matrix that can simultaneously tune mechanical properties and electrical functions offers the prospect of high-performance stretchable functional optoelectronic devices.

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“…This intricate network enables parallel implementation of information storage and processing, while consuming significantly less power than traditional computing paradigms. [10][11][12] Artificial synapses play a crucial role in neuromorphic simulation, facilitating the emulation of interactions among biological neurons, enabling information transmission and processing between artificial neurons, and serving as fundamental components for simulating the plasticity of biological synapses. 13 Previous studies have provided evidence of the capability of artificial synaptic systems to perceive and respond to external photoelectric inputs, thereby generating postsynaptic reactions.…”

Section: Introductionmentioning

confidence: 99%