2019
DOI: 10.1039/c9ra07294b
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A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

Abstract: We developed a procedure for direct patterning graphene with arbitrary position, size, and shape on Si from a solid-state carbon source without dry etching. Our light emitting devices perform on a par with those based on high crystallinity graphene.

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Cited by 8 publications
(12 citation statements)
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“…The graphene temperatures, obtained by the fitting of Planck’s law, are estimated to be 1238, 1340, 1455, and 1596 K at V p–p = 1.25, 1.30, 1.35, and 1.40 V, respectively. These temperatures are consistent with the previously reported temperatures in graphene emitters. ,,, Furthermore, we also demonstrated the measurement of longer-wavelength emission spectra up to 10 μm in air by using the Al 2 O 3 -capped unsuspended graphene microemitter, which enables us to measure the lower-wavenumber IR analysis (Figure S2).…”
Section: Resultssupporting
confidence: 90%
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“…The graphene temperatures, obtained by the fitting of Planck’s law, are estimated to be 1238, 1340, 1455, and 1596 K at V p–p = 1.25, 1.30, 1.35, and 1.40 V, respectively. These temperatures are consistent with the previously reported temperatures in graphene emitters. ,,, Furthermore, we also demonstrated the measurement of longer-wavelength emission spectra up to 10 μm in air by using the Al 2 O 3 -capped unsuspended graphene microemitter, which enables us to measure the lower-wavenumber IR analysis (Figure S2).…”
Section: Resultssupporting
confidence: 90%
“…These temperatures are consistent with the previously reported temperatures in graphene emitters. [12][13][14][15][16][17][18][19][20][21][22]24,25,27 Furthermore, we also demonstrated the measurement of longer-wavelength emission spectra up to 10 μm in air by using the Al 2 O 3 -capped unsuspended graphene microemitter, which enables us to measure the lowerwavenumber IR analysis (Figure S2).…”
Section: ■ Results and Discussionmentioning
confidence: 95%
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“…The method of using a solid‐state carbon source to grow GNRs with the aid of a Ni catalyst can also be completed by direct heating ( Figure ). [ 117 ] Following a similar procedure, Ni and amorphous carbon film were deposited on a Si substrate as a catalyst and a carbon source, respectively. After patterning the prepared films via lift‐off lithography, the sample was heated up to 1100 °C in vacuum and then cooled to room temperature, leading to the formation of GNRs.…”
Section: Bottom‐up Routesmentioning
confidence: 99%