A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Abstract

Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few‐layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2, M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h‐BN). These results indicate the universality of the phenomenon in 2D non‐conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming‐free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive‐point mechanism supported by first‐principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

High‐performance electronics and optoelectronics of monolayer tungsten diselenide full film from pre‐seeding strategy

“…Here, the CVD‐fabricated 2D materials are compatible with the production line of Si technology 34 . Indeed, the 2D materials over the oxide surface facilitate direct device fabrication 35,36 . However, the fabrication process of monolayer WSe 2 film is yet sophisticated compared with other TMDCs 37 …”

Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition

“…As silicon-based CMOS technology is reaching its physical limits, two-dimensional transition metal dichalcogenides (TMDs) have been intensively investigated as potential ultrathin channel materials for future electronics. TMDs show tunable bandgap, good air-stability, and high carrier mobility and can be applied in transistors [1][2][3][4], photodetectors [5], computing technologies [6,7], memory [8,9], RF [10][11][12], and heterojunction synapse [13,14]. However, there are still many challenges, including (1) realization of large wafer-scale deposition, (2) a controllable p-type doping method for TMD films, (3) reducing Schottky barrierinduced Fermi level pinning at the metal/TMDs contacts, and (4) high-quality high-k/TMD interface.…”

Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials

“…Meanwhile, the emergence of two-dimensional (2D) nanomaterials has ignited considerable interest in their potential, owing to their atomically thin nature [ 28 ] and superior electrical and optical characteristics. These 2D nanomaterials, including graphene [ 29 , 30 ], hexagonal boron nitride (hBN) [ 31 , 32 ], and metal dichalcogenides (MX 2 ) [ 33 , 34 ], have a layered structure based on strong in-plane bonds and weak out-of-plane van der Waals (vdW) force.…”