A latch-up-free LVTSCR with improved overshoot characteristic for ESD protection in 40 nm CMOS process

Abstract

In this paper, a novel robust low-voltage-triggered silicon-controlled rectifier (LVTSCR) with high holding voltage, low trigger voltage, and low overshoot voltage has been proposed for 5 V integrated circuit electrostatic discharge (ESD) protection. The new LVTSCR integrates an extra low-resistance current path by embedding an NMOS transistor into the traditional LVTSCR. This extra current path will divert part of the ESD current, thus resulting in a lower overshoot voltage as well as better quasi-static I–V characteristics in the new structure. As such, the holding voltage of the new LVTSCR has been increased by ∼23%, the quasi-static triggering characteristic has been decreased by ∼8%, and the overshoot voltage has been improved by ∼38%.

Enhancement of heat dissipation in β-Ga2O3 Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

“…Major electric vehicle manufacturers have adopted SiC inverters to reduce vehicle weight and enhance energy efficiency. 1 GaN has been successfully utilized for fast chargers and in 5G communication technologies as a high-power amplifier. 2,3 In comparison with WBG materials, b-Ga 2 O 3 , a UWBG material, has a larger bandgap range (4.7-4.9 eV) and theoretically higher breakdown fields (B8 MV cm À1 ).…”

“…2,3 In comparison with WBG materials, b-Ga 2 O 3 , a UWBG material, has a larger bandgap range (4.7-4.9 eV) and theoretically higher breakdown fields (B8 MV cm À1 ). 4 b-Ga 2 O 3 exhibits an exceptionally high Baliga's figure-of-merit (BV 2 /R ON )-which is the performance indicator related to conduction loss-which is equal to 3214, surpassing those of Si (1), SiC (317), and GaN (846). 5 Using the edge-defined film-fed growth method, it is possible to produce large-area substrates for commercial purposes (4 in) and research applications (6 in).…”

A high performance RC-INV triggering SCR under 0.25 µm process

“…However, the disadvantages are that the SCR trigger voltage is too high, the deep snapback brings low holding voltage and the opening speed is slow. To improve the performance of the SCR, the modified lateral SCR (Liang et al , 2015; Du et al , 2019) and the low-voltage triggering SCR (Chen et al , 2021; Chang et al , 2021) were invented to reduce the trigger voltage of the SCR devices. Moreover, some advanced circuit techniques have also been applied to enhance the turn-on efficiency of ESD protection circuits with SCR devices, such as the gate-coupled technique (Wei et al , 2021) and the GGNMOS-triggered SCR (Zhang et al , 2015).…”