“…Nitriding In 2 O 3 in an NH 3 flux was also used to grow InN micro‐ and nanostructures due to the simple fabrication process and the simple nature of the starting materials 18. 23, 24 InN nanowires fabricated hitherto by these methods have a broad distribution in diameter sizes of 10–40,19 40–80,14 10–100,15 30–100,16 50–100,21 and 10–200 nm 13 and are rather short in length (from one to a few micrometers12, 14, 16–19, 21). To our knowledge, it still remains a challenge to realize the synthesis of InN nanowires in large quantities due to the low decomposition temperature (∼550 °C)25 and high equilibrium vapor pressures26 inherent to the In–N binary compound.…”