A kinetic study of indium nitride formation from indium oxide powders

Murali, Amith; Barve, Anirudha D; Risbud, Subhash H.

doi:10.1016/s0921-5107(02)00301-x

Cited by 17 publications

(9 citation statements)

References 3 publications

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“…Further nitridation of the In 2 O 3 microtubes was performed carefully, considering the kinetics of nitridation. 18 The results show that the reaction is completed at 600°C for 10 h, as evidenced from XRD analysis in Fig. 1 ͑No.…”

mentioning

confidence: 71%

Conformal conversion from helical hexagonal InN microtubes to In2O3 counterparts

Luo

Zhou

Zhang

et al. 2006

Applied Physics Letters

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confidence: 71%

Conformal conversion from helical hexagonal InN microtubes to In2O3 counterparts

Luo

Zhou

Zhang

et al. 2006

Applied Physics Letters

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“…Murali et al. proved that it is feasible to synthesize InN materials by nitriding In 2 O 3 powder in flowing NH 3 23. They demonstrated that the kinetics of the nitridation reaction is diffusion‐controlled and limited by the rate of the interfacial (InN/In 2 O 3 ) reaction.…”

Section: Resultsmentioning

confidence: 99%

“…Nitriding In 2 O 3 in an NH 3 flux was also used to grow InN micro‐ and nanostructures due to the simple fabrication process and the simple nature of the starting materials 18. 23, 24 InN nanowires fabricated hitherto by these methods have a broad distribution in diameter sizes of 10–40,19 40–80,14 10–100,15 30–100,16 50–100,21 and 10–200 nm 13 and are rather short in length (from one to a few micrometers12, 14, 16–19, 21). To our knowledge, it still remains a challenge to realize the synthesis of InN nanowires in large quantities due to the low decomposition temperature (∼550 °C)25 and high equilibrium vapor pressures26 inherent to the In–N binary compound.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of LongIndium Nitride Nanowires with Uniform Diameters in Large Quantities

Luo

Zhou

Zhang

et al. 2005

Small

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Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In(2)O(3)) powders in an ammonia (NH(3)) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In(2)O(3) starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 microm in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In(2)O(3) powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.

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“…After the ITO powder is shaped by cold isostatic pressing, grains in the green compact contact closely with each other, which can make the diffusion resistance decrease in the sintering process [8]. With the forming pressure increasing, the contact region between grains in the green compact is enhanced and the migration distance of particles is shorter, which is in favor of increasing the density of the ITO sintering body.…”

Section: Effect Of Forming Pressure On the Relative Densitymentioning

confidence: 99%

Preparation of indium tin oxide targets with a high density and single phase structure by normal pressure sintering process

Liu

Wang

2011

Rare Metals

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The present work mainly describes the technology for preparing indium-tin oxide (ITO) targets by cold isostatic pressing (CIP) and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550°C for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were investigated. Also, a discussion was made on the sintering atmosphere.

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A kinetic study of indium nitride formation from indium oxide powders

Cited by 17 publications

References 3 publications

Conformal conversion from helical hexagonal InN microtubes to In2O3 counterparts

Conformal conversion from helical hexagonal InN microtubes to In2O3 counterparts

Synthesis of LongIndium Nitride Nanowires with Uniform Diameters in Large Quantities

Preparation of indium tin oxide targets with a high density and single phase structure by normal pressure sintering process

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