Synthesis of LongIndium Nitride Nanowires with Uniform Diameters in Large Quantities

Abstract

Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In(2)O(3)) powders in an ammonia (NH(3)) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In(2)O(3) starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 microm in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In(2)O(3) powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

“…5b and c) along [2, −1, −1, 0] and [0, 1, −1, 0] zone axis, respectively, indicate that the growth direction of the nanowire is along [0 0 0 1]. The stacked-sheet growth morphology of AlN nanowires firstly reported here were also found in some hexagonal wurtzite nanowires including GaN, InN and ZnO [20,21], which indicates the nanostructure may be a typical morphology for the hexagonal wurtzite isostructures. Fig.…”

Template-free synthesis of helical hexagonal microtubes of indium nitride

“…8,18 The furnace was set at 953 K and 60 sccm NH 3 ͑anhydrous, 99.999%͒ was introduced into the tube during the whole reaction process. 8,18 The furnace was set at 953 K and 60 sccm NH 3 ͑anhydrous, 99.999%͒ was introduced into the tube during the whole reaction process.…”

“…Different morphologies of the InN, such as nanowires, 18 nanobelts, and microtubes and so on, were achieved. Different morphologies of the InN, such as nanowires, 18 nanobelts, and microtubes and so on, were achieved.…”

Inorganic Nanotubes and Nanowires

“…[354] Direction-dependent homoepitaxial growth of GaN nanowires has been achieved by controlling the Ga flux during the direct nitridation in dissociated ammonia. [355] Nitridation of Ga droplets leads to GaN nanowire growth in the c-direction (<1000>), while the nitridation with a low Ga flux leads to growth in the a-direction [356] A general method for the synthesis of Mn-doped nanowires of CdS, ZnS and GaN based on metal nanocluster-catalysed CVD has been described. [357] Vertically aligned, catalyst-free InP nanowires have been grown on InP(III)B substrates by CVD of trimethylindium and phosphine at 623-723 K. [358] Homogeneous InAs 1-x P x nanowires as well as InAs 1-x P x heterostructure segments in InAs nanowires, with P concentration varying from 22 to 100 %, have been prepared by varying the reactant ratio, temperature and diameter of the nanowires.…”