A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF Discharge

Anderson, H.; Merson, Joanna; Light, R. W.

doi:10.1109/tps.1986.4316518

Cited by 74 publications

(49 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Muitos destes processos são ainda pouco conhecidos do ponto de vista teórico, e muito do conhecimento atual a respeito desses sistemas é puramente empírico. O crescente interesse na compreensão dos fenômenos envolvidos motivou numerosos estudos [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] sobre a química de misturas de CF 4 /O 2 e SF 6 /O 2 .…”

Section: Introductionunclassified

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Bauerfeldt¹,

Arbilla²

1998

Quím. Nova

View full text Add to dashboard Cite

compounds has technological interest. Presently, considerable effort is being devoted to understand the chemistry involved. In this work, a numerical modeling analysis of the gas-phase decomposition of CF 4 /O 2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes was determined as well as the effect of the parameters' uncertainties. The results were compared with experimental data. The main etching agent in the system is the fluorine atom. The concentration of the main species, SiF 4 , CO, CO 2 and COF 2 depend on the composition of the mixture.Keywords: plasma etching; numerical modeling; CF 4 decomposition. ARTIGO INTRODUÇÃOOs processos de corrosão em plasma são amplamente utilizados nas indústrias de semicondutores e microfabricação 1 . Nesses processos, um gás é decomposto na região de descarga, formando espécies altamente reativas, como radicais e átomos, que posteriormente interagem com o substrato, formando compostos voláteis ou, através de processos de adsorção e reação, dando filmes finos. Compostos fluorados, como CF 4 e SF 6 são muito utilizados na corrosão de silício em plasmas a baixas pressões. Esses sistemas são muito complexos e envolvem uma série de processos elementares que acontecem simultaneamente, como a química em fase gasosa de moléculas, átomos, radicais e espécies excitadas, o transporte de espécies, interações gás-superfície, dissociação por impacto de elétrons e química de espécies carregadas. Muitos destes processos são ainda pouco conhecidos do ponto de vista teórico, e muito do conhecimento atual a respeito desses sistemas é puramente empírico. O crescente interesse na compreensão dos fenômenos envolvidos motivou numerosos estudos 2-19 sobre a química de misturas de CF 4 /O 2 e SF 6 /O 2 .A complexidade dos processos mencionados acima torna muito difícil a implementação e solução de um modelo completo para explicar os resultados experimentais. Uma descrição detalhada do processo de corrosão requer, como mencionado acima, conhecimento da densidade eletrônica, a distribuição de energia dos elétrons e espécies químicas, as interações íon-elé-tron, elétron-espécies neutras, íons-espécies neutras e íon-íon, as reações químicas homogêneas e heterogêneas e as interações gás-superfície. A densidade e distribuição de energia variam no tempo e no espaço, o que torna a solução do problema muito complicada e com um custo computacional imenso. Alguns aspectos químicos estão, também, bastante sujeitos a incerteza, particularmente as velocidades de dissociação por impacto de elétrons e as constantes de velocidade das reações heterogêneas e de espécies carregadas. Por isso, diferentes autores adotaram aproximações diferentes ao problema, utilizando submodelos que descrevem um ou alguns dos aspectos do sistema, que pretendem ser explicados, e parametrizando de forma razoável os outros processos. Assim, alguns trabalhos recentes abordam a aná-lise dos fenômenos físicos de transporte de espécies e distribuição de energia dentro do reator 16,17 , enquant...

show abstract

Section: Introductionunclassified

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Bauerfeldt¹,

Arbilla²

1998

Quím. Nova

View full text Add to dashboard Cite

show abstract

“…A representative but not exhaustive list of recent papers includes: Anderson et al (1986), Kline (1986), Partlow and Kline (1986), Stenger and Akiki (1986), Kushner (1982;, Edelson and Flamm (1984), Greenberg and Verdeyen (1985), Tachibana et al (1984), Mocella et al (1986), Rhee andSzekely (1986), andDalvie et al (1986). Progress continues to be made in applying reaction engineering principles to plasma reactors (for example, Rhee andSzekely, 1986, andDalvie et al, 1986, solve for the neutral gas velocity profile in two spatial dimensions), but major advances in the field will require a much better understanding of discharge physics and plasma-surface interactions.…”

Section: Aiche Journalmentioning

confidence: 99%

Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

View full text Add to dashboard Cite

Plasma processing has emerged as an important technology for the deposition and etching of thin solid films in the manufacture of microelectronic devices. In fact, much of the progress achieved to date in device miniaturization would have been much more difficult without the unique characteristics of plasma processes. It is anticipated that future progress will continue to rely heavily on plasma technology. Although plasma chemical reactors are widely used, a lack of fundamental understanding has resulted in heavy reliance on empiricism in process design and control. The complexities inherent in any chemical reactor are compounded in plasma processing by the presence and active participation of the discharge in both gas phase and surface chemical processes. This has resulted in a technology that is sensitive to many design and operating parameters. A large parameter space gives process engineers flexibility in tailoring process conditions to meet objectives. However, without fundamental insight into the key physical and chemical processes, reactor design and control cannot be based on systematic, rational procedures. The purposes of this review are to introduce chemical engineers to plasma processing practice and phenomenology; to outline the progress made to date in fundamental studies of discharge physics and chemistry; to indicate areas in which chemical engineers must expand their traditional training to participate in plasma processing research; and finally to suggest how established chemical engineering methodology can be applied to plasma chemical reactors. David B. Graves Department of Chemical EngineeringUniversity of California Berkeley, CA 94720Introduction to Plasma Processing History, motivation, and future prospects Molecular gas plasmas are currently widely used in the microelectronics industry for the deposition and etching of thin solid films. Plasma processing is one of many techniques and processes used in the manufacture of integrated circuits (Doane et al., 1982), but the importance of plasma processing to present and future developments in microelectronics, coupled with the growing interest in this technology by chemical engineers, justifies a closer look at industrial practice and the underlying science. Simply stated, microelectronics manufacturing amounts to the growth, patterning, and doping of multiple layers of insulating, semiconducting, and conducting thin films (Hess, 1979). Consequently, deposition and selective etching of films is fundamental to many of the steps involved in this industry. It happens that chemically reacting, weakly ionized gas discharges are particularly powerful tools for depositing and removing thin films.Plasma etching is the more important process industrially, with VLSI (very large scale integration) relying upon the superior pattern transfer fidelity possible with plasma etching (a more or less equivalent term is reactive-ion etching). The utility of plasmas for etching hinges on their ability, under certain conditions, to remove material in the direction p...

show abstract

“…[6] There are some computational studies of SF 6 /O 2 plasmas but they do not explicitly refer to cryoetching. Blauw et al [15] investigated the kinetics of SF 6 Ryan and Plumb previously developed a model to describe the SF 6 /O 2 plasma chemistry and the etching of Si with these plasmas, [20] [ 21] In recent years, not only low-k dielectric cryoetching but also silicon cryoetching has gained increasing interest. The primary difficulty with SF 6 /O 2 cryogenic DRIE is the high sensitivity to the oxygen content and the substrate temperature.…”

Section: Introductionmentioning

confidence: 99%

Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF₆/O₂ plasmas

Tinck

Tillocher

Georgieva

et al. 2017

Plasma Processes & Polymers

View full text Add to dashboard Cite

Cryogenic plasma etching is a promising technique for high-control wafer development with limited plasma induced damage. Cryogenic wafer temperatures effectively reduce surface damage during etching, but the fundamental mechanism is not well understood. In this study, the influences of wafer temperature, gas mixture and substrate bias on the (cryogenic) etch rates of Si with SF 6 /O 2 inductively coupled plasmas are experimentally and computationally investigated. The etch rates are measured in situ with double-point reflectometry and a hybrid computational Monte Carlo -fluid model is applied to calculate plasma properties. This work allows the reader to obtain a better insight in the effects of wafer temperature on the etch rate and to find operating conditions for successful anisotropic (cryo)etching.

show abstract

A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF Discharge

Cited by 74 publications

References 29 publications

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Plasma processing in microelectronics manufacturing

Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF₆/O₂ plasmas

Contact Info

Product

Resources

About

A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF Discharge

Cited by 74 publications

References 29 publications

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2

Plasma processing in microelectronics manufacturing

Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas

Contact Info

Product

Resources

About

Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF₆/O₂ plasmas