2020 IEEE Asian Solid-State Circuits Conference (A-Sscc) 2020
DOI: 10.1109/a-sscc48613.2020.9336143
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A Jitter-Tolerant Referenceless Digital-CDR for Cellular Transceivers

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Cited by 3 publications
(1 citation statement)
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“…The proposed CDR was fabricated in a 28 nm low-power CMOS technology with an area of 100 µm × 90 µm, as shown in Figure 13 [20]. The overall power consumption of the CDR, the CML-to-CMOS converter, and the bias generator was 13 mW from a 1-V supply at 10 Gb/s (12.7 mW for the CDR).…”
Section: Measurement Resultsmentioning
confidence: 99%
“…The proposed CDR was fabricated in a 28 nm low-power CMOS technology with an area of 100 µm × 90 µm, as shown in Figure 13 [20]. The overall power consumption of the CDR, the CML-to-CMOS converter, and the bias generator was 13 mW from a 1-V supply at 10 Gb/s (12.7 mW for the CDR).…”
Section: Measurement Resultsmentioning
confidence: 99%