A hysteresis model for a vanadium dioxide transition-edge microbolometer

Almeida, L.A.L. de; Deep, G.S.; Lima, A.M.N.; Neff, H.; Freire, Raimundo C. S.

doi:10.1109/19.948321

Cited by 28 publications

(16 citation statements)

References 5 publications

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“…By calculating the FORC distribution for the log of the resistance there is an increase in sensitivity to features over the entire range of resistance, which is almost four decades 20 . The mixed second-order derivative eliminates the parts in the data set where resistance is constant under a change in T or in T R .…”

Section: Forc Proceduresmentioning

confidence: 99%

“…Before proceeding, let us briefly describe the more common Preisach model 20,38 . The Preisach model, in its simplest form, is based on the assumption that each grain has a transition temperature T c ±δT c , where the plus and minus signs correspond to heating and cooling, respectively.…”

Section: A Mean-field Effective-medium Theory Of Hysteresis In Vo2mentioning

confidence: 99%

“…For example, in polycrystalline thin films and single crystals of VO 2 embedded in silicon, the hysteresis width grows with decreasing of the crystallite size 18 . Attempts in modeling the thermal hysteresis have been mainly by various forms of the Preisach model 20 , where hysteresis is assumed to exist in different domains of the system under investigation. Here the hysteresis widths and amplitudes, and distribution of domains are fitting parameters of the model 20,21 .…”

Section: Introductionmentioning

confidence: 99%

“…Attempts in modeling the thermal hysteresis have been mainly by various forms of the Preisach model 20 , where hysteresis is assumed to exist in different domains of the system under investigation. Here the hysteresis widths and amplitudes, and distribution of domains are fitting parameters of the model 20,21 . To the best of our knowledge, there is a scarcity of physical models of the hysteresis and a discussion of its microscopic origin, especially for first order phase transitions.…”

Section: Introductionmentioning

confidence: 99%

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First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

et al. 2009

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We have performed first order reversal curve measurements of the temperature-driven metalinsulator transition in VO2 thin films, which enable quantitative analysis of the hysteresis behavior. An unexpected tail-like feature in the contour plot of the reversal curve distribution indicates the existence of metallic domains, even at temperatures below the closing of the hysteresis. These domains interact with the surrounding medium and change the reversal path relative to a path from a fully insulating state. With this in mind, and assuming that such interaction persist through the entire phase transition, we develop a model where the driving force (or energy barrier) in charge of opening a hysteresis in VO2 are inter-domain interactions. This model is intrinsically different from the Preisach model usually used to describe hysteresis; given that it looks for the microscopic origin of the hysteresis, and provides physical parameters to characterize it.

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Section: Forc Proceduresmentioning

confidence: 99%

Section: A Mean-field Effective-medium Theory Of Hysteresis In Vo2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

et al. 2009

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“…The exact physics driving such transitions is still debated with some authors proposing thermal mechanisms [14] [15] and some others proposing electrical ones [16]. Independently of the underlying physical mechanism, it has been shown that such transitions can be triggered using various external stimuli including thermal [17], electrical [18], as well as optical and mechanical. Being interested in electronic applications, in this paper we will focus on the electrically-triggered VO 2 switching-like behavior [19], [20].…”

Section: Circuit-level Model Of a Vo 2 Devicementioning

confidence: 99%

Modeling and Simulation of Vanadium Dioxide Relaxation Oscillators

Maffezzoni

Daniel

Shukla

et al. 2015

IEEE Trans. Circuits Syst. I

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Abstract-This paper deals with modeling and simulation of a new family of two-terminal devices fabricated with vanadium dioxide material. Such devices allow realization of very compact relaxation nano-oscillators that can be connected electronically to form arrays of coupled oscillators. Challenging applications of oscillator arrays include the realization of multi-phase signal generators and massively parallel brain-inspired neurocomputing. In the paper, a circuit-level model of the vanadium dioxide device is provided which enables extensive electrical simulations of oscillator systems built on the device. The proposed model is exploited to explain the dynamics of vanadium dioxide relaxation oscillators as well as to accomplish a robust parameter design. Applications to the realization of voltage-controlled oscillators and of multi-phase oscillator arrays are illustrated.

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