A hybrid model describing ion induced kinetic electron emission

Hanke, Stefanie; Duvenbeck, A.; Heuser, Christian; Weidtmann, B.; Wucher, A.

doi:10.1016/j.nimb.2015.01.008

Cited by 3 publications

(4 citation statements)

References 31 publications

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“…This simplistic model does surprisingly well, considering the underlying complexity of the processes involved. A more detailed model would likely have to include the details of hot electron transport in diodes in addition to the energy absorption 22,23 .…”

Section: Switched Device Asymmetric Structurementioning

confidence: 99%

“…where α is a prefactor, A is the area of the filament, 𝜑 is the effective barrier height, and 𝑇 is the ambient temperature 51 . The ISEE signal can be assumed to follow thermionic emission theory, with a characteristic hot electron temperature, T e , such that 22,23 𝐼 = 𝛽𝐴𝑒 . (Eq.…”

Section: Scaling Of the Internal Secondary Electron Emission Signalmentioning

confidence: 99%

“…𝐼 ↔ , produced when e-beam-induced electron-hole pairs are created at junctions between materials and separated by built-in fields, is often the largest and most commonly measured EBIC partition [19][20][21] . 𝐼 → and 𝐼 → are unique to MIM structures and result from thermionic emission, diffusion, or tunneling of hot electrons from one electrode to the other [22][23][24] . In a conventional MIM diode, the internal secondary electron currents are usually negligible, but become measurable at large applied biases (V b ) due to a lowering of the effective barrier height.…”

Section: Introductionmentioning

confidence: 99%

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Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

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Section: Switched Device Asymmetric Structurementioning

confidence: 99%

Section: Scaling Of the Internal Secondary Electron Emission Signalmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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“…Thus, TRK mode in the CST simulation was employed. The source was set as thermionic emission governed by Richardson-Dushmann equation [44], and space charge density around the source was based on Child-Langmuir equation [45]. The electric fields due to potentials at cathode, Wehnelt, and anode were applied to the system, while an external magnetic strength, generated from a solenoid, was then varied from 12.9 to 25.6 m −1 .…”

Section: Modification Of DC Electron Gun For Thz Sourcementioning

confidence: 99%

An alternative technique for verification of terahertz Smith–Purcell radiation

Rattanawan¹,

Chulapakorn²,

Tanapirom³

et al. 2021

J. Phys. D: Appl. Phys.

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An alternative technique to verify terahertz (THz) Smith-Purcell radiation (SPR) was proposed by using different grating periods. A compact DC electron gun, serving as a THz source, was modified to generate continuous 35 keV electron beam that passes by a metal-coated silicon grating in order to induce SPR. A design on beam optics to generate high-brightness beam was carried out by using Computer Simulation Technology (CST) Studio Suite ® software package. The optimization of beam parameters was obtained and experimentally performed. Results show that the root-mean-square (rms) beam size (diameter) is about 1 mm when supplying beam current of 200 µA, and rms beam emittance is about 3π mm mrad. The CST simulation software was, furthermore, employed to observe radiation spectra when using different grating structures. A liquid-helium cooled silicon bolometer together with a low-pass filter was used to detect radiation power. The results reveal that incoherent THz signal with power of 1.5 µW cm −2 is observed when the continuous-beam current is about 200 µA. The dependence of THz frequency and power on the grating period, that is associated to the SPR, was also investigated in this work.

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