A hybrid inorganic–organic light-emitting diode using Ti-doped ZrO₂ as an electron-injection layer

Abstract

We have fabricated stable efficient iridium(III)-bis-5-(1-(naphthalene-1-yl)-1H-phenanthro [9,10-d] imidazole-2-yl) benzene-1,2,3-triol (acetylacetonate) [Ir(NPIBT) 2 (acac)] doped inverted bottom-emissive green organic light-emitting diodes using Ti-doped ZrO 2 nanomaterials as the electron injection layer.The current density (J) and luminance (L) of the fabricated devices with Ti-doped ZrO 2 deposited between an indium tin oxide cathode and an Ir(NPIBT) 2 (acac) emissive layer increased significantly at a low driving voltage (V) compared with control devices without Ti-doped ZrO 2 . The Ti-doped ZrO 2 layer can facilitate the electron injection effectively and enhances the current efficiency (h c ) of 2.84 cd A À1 and power efficiency (h p ) of 1.32 lm W À1 ; Tel: +91 9443940735 † Electronic supplementary information (ESI) available. See

Formation of zircon‐type (Zr,Ti)1−x(Dy)x(SiO4)1−x(PO4)x solid solution and their optical and magnetic characteristics

“…FT‐IR spectra recorded in the samples treated at 1000°C (Figure 5), for all the investigated systems, displayed bands at 471 and 814 cm −1 typical of Zr–O vibrational modes, and the characteristic peak of Si–O–Si asymmetric stretching is detected at 1084 cm −1 . However, the vibrational bands at 631 and 1248 cm −1 were attributed to the presence of O–P–O bond 8 , 31 . The spectra recorded for 1400°C (Figure 5) display transmittance bands typical of SiO 2 and PO 4 groups.…”

“…However, the vibrational bands at 631 and 1248 cm −1 were attributed to the presence of O-P-O bond. 8,31 The spectra recorded for 1400 • C (Figure 5) display transmittance bands typical of SiO…”

Efficient and chromaticity stable green and white organic light-emitting devices with organic–inorganic hybrid materials

“…The deeper VB of Cd-doped SnO 2 results in an efficient hole-blocking functionality, improving efficiencies 78 (Table 2). The efficiencies of SnO 2 and Cd-doped SnO 2 based devices have been compared with those of various recently reported electron injection layers (Table S1 †) 78,79 which shows that SnO 2 and Cd-doped SnO 2 based devices are the best in terms of power and current efficiencies, and we believe that SnO 2 and Cd-doped SnO 2 NPs should be adopted as good potential candidates for future displays as well as for device performance.…”

Reducing contact resistance in bottom contact organic field effect transistors for integrated electronics

“…Most of the used inorganic salt materials are hygroscopic and might deteriorate the intrinsic properties of the OSC layer [62,88,89]. Metal oxide based CILs normally require high temperature annealing to achieve good stability, for example, zinc oxide CILs processed by the sol-gel method need a calcination process at a temperature higher than 400 °C and the required calcination temperature for zirconia based CILs is up to 500 °C [89,90]. Such a high temperature is incompatible with most low-cost plastic substrates.…”