A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

Bayram, Can; Téherani, F. Hosseini; Rogers, David J.; Razeghi, Manijeh

doi:10.1063/1.2975165

Cited by 68 publications

(40 citation statements)

References 18 publications

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“…The blue-shift has been attributed to several different factors, such as band renormalization and band filling [383], and the screening effect of the built-in [371]. Reproduced with permission piezoelectric field [384].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…Obtained results indicate that all the emission peaks (orange, yellow, blue under reverse bias, and violet under forward bias), originate from the p-GaN layer and/or GaN/ZnO interface since they can be observed in the absence of ZnO, as discussed in the Subsection III D. To improve the brightness of the devices, we have utilized a simple approach of growing ZnO nanostructures on a commercial group-III nitride-based LED wafer. 10,30 It has been shown that device architectures containing ZnO and InGaN multiple quantum wells (MQWs), [31][32][33] where dominant light emission peak originates from InGaN MQW, [31][32][33] can result in bright devices with low turn-on voltage (2.5 V). 31,32 Thus, we have employed a simple method of growing ZnO nanorods by electrodeposition on top of a commercial, unetched GaN-based LED wafer followed by the deposition of electrode onto ZnO, without any etching steps involved.…”

Section: Introductionmentioning

confidence: 99%

“…10,30 It has been shown that device architectures containing ZnO and InGaN multiple quantum wells (MQWs), [31][32][33] where dominant light emission peak originates from InGaN MQW, [31][32][33] can result in bright devices with low turn-on voltage (2.5 V). 31,32 Thus, we have employed a simple method of growing ZnO nanorods by electrodeposition on top of a commercial, unetched GaN-based LED wafer followed by the deposition of electrode onto ZnO, without any etching steps involved. Using such a simple process, high brightness devices have been achieved, as discussed in Subsection III E.…”

Section: Introductionmentioning

confidence: 99%

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Appl. Phys. Lett. 100, 153506 (2012) Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring J. Appl. Phys. 111, 074512 (2012) Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes J. Appl. Phys. 111, 074506 (2012) Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering Appl. Phys. Lett. 100, 141907 (2012) Low-cost caesium phosphate as n-dopant for organic light-emitting diodes J. Appl. Phys. 111, 074502 (2012) Additional information on J. Appl. Phys. ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.

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“…[2][3][4] Other promising optoelectronic device applications include blue and green light emitting diodes, [5][6][7] where ZnO can be used either as the active region or as a transparent contact.…”

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confidence: 99%

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Veal

King

Hatfield

et al. 2008

Applied Physics Letters

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The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43Ϯ 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29Ϯ 0.20 eV, this indicates that a type-II ͑staggered͒ band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

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A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

Cited by 68 publications

References 18 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

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