A Hybrid Film-Bulk-Acoustic-Resonator/Coupled-Line/Transmission-Line High Selectivity Wideband Bandpass FBAR Filter

Wu, Haopeng; Wu, Yongle; Lai, Zhiguo; Wang, Weimin; Yang, Qinghua

doi:10.1109/tmtt.2020.2989264

Cited by 19 publications

(10 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In yet another approach, FBW widening is achieved through hybrid integration of AWRs and electromagnetic (EM) components. In [15], [16], AWRs are combined with microstrip transmission lines. Such an approach occupies large size due to the use of distributed elements.…”

Section: Introductionmentioning

confidence: 99%

Acoustic Wave Resonator-Based Bandpass Filters With Continuously Tunable Fractional Bandwidth

Nasser

Psychogiou

2023

IEEE Trans. Circuits Syst. II

View full text Add to dashboard Cite

A new class of acoustic-wave resonator-based bandpass filters (BPFs) with continuously tunable fractional bandwidth (FBW) are presented. They are based on cascaded multi-resonant stages of hybridly-integrated surface acoustic wave (SAW) resonators with lumped element (LE) components. Each stage comprises one SAW resonator and one or more LE resonators that contribute to the overall transfer function to one pole and two transmission zeros (TZs). As such highly-selective quasi-elliptic transfer functions with N poles, 2N TZs and enhanced FBW can be created for two series and N-2 parallel stages. It is shown that by reconfiguring the resonant frequency of the LE resonators, continuously-tunable FBWs can be obtained. The operating principles of the multi-stage concept are demonstrated through design examples of multi-stage prototypes. The concept has been validated at 916.6 MHz through a fourpole/eight-TZ BPF with tunable BW between 0.63-1.32 MHz (i.e., FBW=0.57 -1.32kt 2 ), minimum in-band insertion loss (IL) 3.9-2.3 dB (Qeff =7700-6000) and out-of-band isolation > 27 dB. Index Terms-Acoustic wave resonator (AWR), high quality factor (Q), tunable bandpass filter (BPF), kt 2 -enhancement.

show abstract

Section: Introductionmentioning

confidence: 99%

Acoustic Wave Resonator-Based Bandpass Filters With Continuously Tunable Fractional Bandwidth

Nasser

Psychogiou

2023

IEEE Trans. Circuits Syst. II

View full text Add to dashboard Cite

show abstract

“…The BAW resonators, represented by Film Bulk Acoustic Resonators (FBARs), have a high phase velocity (11,400 m/s for aluminum nitride (AlN) ) [ 3 ] and are fully compatible with IC technology, making up for the limitations of the SAW resonators. Additionally, the FBARs exhibit a high quality factor and extremely low insertion loss [ 4 , 5 ]. However, the FBARs operate in thickness extensional mode, so the resonant frequency is determined by the thickness of the piezoelectric plate, making it impossible to integrate a multi-band filter onto a single chip through lithography technology.…”

Section: Introductionmentioning

confidence: 99%

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

2023

View full text Add to dashboard Cite

Piezoelectric Laterally Vibrating Resonators (LVRs) have attracted significant attention as a potential technology for next-generation wafer-level multi-band filters. Piezoelectric bilayer structures such as Thin-film Piezoelectric-on-Silicon (TPoS) LVRs which aim to increase the quality factor (Q) or aluminum nitride and silicon dioxide (AlN/SiO2) composite membrane for thermal compensation have been proposed. However, limited studies have investigated the detailed behaviors of the electromechanical coupling factor (K2) of these piezoelectric bilayer LVRs. Herein, AlN/Si bilayer LVRs are selected as an example, we observed notable degenerative valleys in K2 at specific normalized thicknesses using two-dimensional finite element analysis (FEA), which has not been reported in the previous studies of bilayer LVRs. Moreover, the bilayer LVRs should be designed away from the valleys to minimize the reduction in K2. Modal-transition-induced mismatch between electric and strain fields of AlN/Si bilayer LVRs are investigated to interpret the valleys from energy considerations. Furthermore, the impact of various factors, including electrode configurations, AlN/Si thickness ratios, the Number of Interdigitated Electrode (IDT) Fingers (NFs), and IDT Duty Factors (DFs), on the observed valleys and K2 are analyzed. These results can provide guidance for the designs of piezoelectric LVRs with bilayer structure, especially for LVRs with a moderate K2 and low thickness ratio.

show abstract

“…It consists of generating waveguides in a dielectric substrate in which a wave can propagate. Other innovative technologies require a good mastery of the manufacturing processes (Film Bulk Acoustic Resonator (FBAR) [7,8]) or the integration of new materials (superconductors [9,10] and piezoelectric [11,12]), nevertheless, this greatly increases the cost of manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation of Microfluidically Tunable Microwave Filters

Habbachi

Besbes

2022

Electronics

View full text Add to dashboard Cite

This paper presents a contribution to evaluating the performances of tunable devices devoted to RF applications. It is based on reconfiguration by fluids of a capacitor/inductor associated in a monolithic substrate. Indeed, the association of two microfluidic passive devices on the same wafer allows us to increase the total frequency response of microwaves structures. The study evokes the presence and displacement of different conductive and dielectric liquids in the structure microchannels. The theoretical analysis concerns the association of microfluidic devices, a capacitor and inductor, in parallel topology. The obtained results show a good agreement between electrical parameters and the microwave response. Furthermore, a significant frequency variation from 370 MHz to 1720 MHz is achieved, with a tuning range that reaches 364.8%. The experimental part exhibits the fabrication and characterization of two structures in order to evaluate the response of microfluidic actuation for two architectures: a pass-band filter (presented in prior work) and a stop-band filter. The obtained results are in good agreement with the modeled behavior and demonstrate a large tuning range for the stop-band filter.

show abstract

A Hybrid Film-Bulk-Acoustic-Resonator/Coupled-Line/Transmission-Line High Selectivity Wideband Bandpass FBAR Filter

Cited by 19 publications

References 14 publications

Acoustic Wave Resonator-Based Bandpass Filters With Continuously Tunable Fractional Bandwidth

Acoustic Wave Resonator-Based Bandpass Filters With Continuously Tunable Fractional Bandwidth

Modal-Transition-Induced Valleys of K2 in Piezoelectric Bilayer Laterally Vibrating Resonators

Performance Evaluation of Microfluidically Tunable Microwave Filters

Contact Info

Product

Resources

About