A hybrid encapsulation method for organic electronics

Abstract

We report a thin-film encapsulation method for organic electronics that combines the deposition of a layer of SiOx or SiNx (100 nm) by plasma enhanced chemical vapor deposition followed by a layer of Al2O3 (10–50 nm) by atomic layer deposition and a 1-μm-thick layer of parylene by chemical vapor deposition. The effective water vapor transmission rates of the encapsulation was (2±1)×10−5 g/m2 day at 20 °C and 50% relative humidity (RH). The encapsulation was integrated with pentacene/C60 solar cells, which showed no decrease in conversion efficiency after 5800 h of exposure to air demonstrating the effectiveness of the encapsulation methodology.

Synergy Between Plasma‐Assisted ALD and Roll‐to‐Roll Atmospheric Pressure PE‐CVD Processing of Moisture Barrier Films on Polymers

“…This conclusion corresponds well with the behaviour previously observed for the similar hybrid PECVD/ALD layers (100 nm SiO 2 or SiN x / 10-50 nm Al 2 O 3 ), [3] which were grown, however, at low pressure on rigid substrate.…”

“…This consideration is supported also by the recently highlighted remarkable performance of hybrid inorganic layers comprised of an inorganic dyad or a nano-laminate -4 -heterogeneous structures serving as diffusion barriers. [3][4][5][6][7] Nevertheless, despite the excellent barrier film properties obtained using this approach, the above-mentioned experiments were carried out at low pressure and using relatively low deposition rate solutions.…”

C60:LiF Blocking Layer for Environmentally Stable Bulk Heterojunction Solar Cells

“…Unless otherwise noted, devices were stored in ambient air and exposed thermal annealing effect (a surface temperature of ≈ 65 ° C was measured using a thermocouple) and can only be observed in devices with low moisture and oxygen leakage. [ 39,40 ] Finally, by packaging devices with a glass cap and an epoxy seal, devices with the C 60 :LiF composite demonstrated a half-life of 2300 h under constant illumination at ≈ 65 ° C. (see Figure S5, Supporting Information). This lifetime is several times longer than what is typically reported for P3HT:PCBM devices under similar test conditions; typical device lifetimes are on the order of several hundred hours.…”

Self-encapsulation of organic thin film transistors by means of ion implantation

“…In this sense, several solutions have been proposed such as, the employment of hybrid multilayer barriers [14,15]. However, the majority of proposed approaches have been reported only on devices fabricated on rigid substrates, and would not be suitable for the fabrication of flexible electronics [16][17][18][19][20][21][22][23].…”