2009
DOI: 10.1109/jlt.2008.927776
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A Hybrid Electrooptic Microring Resonator-Based $1 \times 4\times 1$ ROADM for Wafer Scale Optical Interconnects

Abstract: 1 ROADM has a footprint of less than 1 mm 2 and has been shown to reconfigure in less than a microsecond.

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Cited by 45 publications
(32 citation statements)
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“…The measured in-device EO coefficient and the measured poling efficiencie are far lower than values reported in parallel-plate poled bulk reference samples, where maximum electro-optic coefficient of r 33,max = 118 pm/V and poling efficiencie of r 33 /E poling = 1.27 nm 2 /V 2 were achieved [17]. These finding are thus in good agreement with finding in other publications where poling of similar guest-host materials in SOH devices was found to be inefficien [11], [12], [16], [18]- [20].…”
Section: A Guest-host Systemsupporting
confidence: 90%
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“…The measured in-device EO coefficient and the measured poling efficiencie are far lower than values reported in parallel-plate poled bulk reference samples, where maximum electro-optic coefficient of r 33,max = 118 pm/V and poling efficiencie of r 33 /E poling = 1.27 nm 2 /V 2 were achieved [17]. These finding are thus in good agreement with finding in other publications where poling of similar guest-host materials in SOH devices was found to be inefficien [11], [12], [16], [18]- [20].…”
Section: A Guest-host Systemsupporting
confidence: 90%
“…So far, the most commonly used cladding materials for SOH integration are polymers doped by EO chromophore molecules [11], [16]. While these guest-host materials have shown EO coefficient as high as 118 pm/V in bulk material [17], values measured in SOH devices were much smaller, ranging from 20 to 60 pm/V [11], [16], [12], [18]- [20]. This has significantl limited the performance of SOH electro-optic modulators up to now.…”
mentioning
confidence: 99%
“…Thermo-optic tuning of ring resonators has shown large wavelength shift with low optical loss [10], but high power consumption and thermal cross-talk between neighboring devices hamper its applicability in densely integrated optical interconnects [11]. Integration of electro-optic materials with low static power dissipation have so far shown low tuning effects, high driving voltages, and optical interference due to fabrication complexity [12]. Table 1 summarizes reported performance of tunable ring resonator add-drop filters.…”
mentioning
confidence: 99%
“…High power dissipation is also an issue for carrier injection tuning [9], combined with carrier absorption, that results in a three times larger BW. Among the low-power devices, the integration of electro-optic materials [12] requires complex fabrication, resulting in a three times larger BW, due to scattering losses. The high driving voltage up to 600 V resulted in a tuning rate that is 50 times lower than in our device, while having a comparable tuning range.…”
mentioning
confidence: 99%
“…By actively tuning the resonance wavelength, tunable wavelength filters, modulators and switches can be created. Mechanisms for resonator tuning have been widely researched and proposed mechanisms include electro-optic tuning [2,3], thermo-optic tuning [4][5][6], as well as exploiting the Kerr-effect [7,8] and plasma dispersion. Plasma dispersion, i.e.…”
Section: Introductionmentioning
confidence: 99%