A HRXRD and nano-indentation study on Ne-implanted 6H–SiC

Xu, Chaoliang; Zhang, C.H.; Li, J.J.; Zhang, L.Q.; Yang, Yitao; Yin, Shi; Jia, Xiaolong; Li, J.Y.; Chen, K.Q.

doi:10.1016/j.nimb.2012.01.009

Cited by 25 publications

(7 citation statements)

References 28 publications

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“…Based on Bragg's law, the low angle position of the satellite peak indicates that the ion irradiation process caused the dilatation of the original SiC lattice along the direction perpendicular to the sample surface. This effect has been reported in previous studies [7,11,17]. These satellite damage peaks reflect the variation of radiation-induced elastic strain (e) which can be used to quantify the degree of the lattice deformation.…”

Section: X-ray Diffractionsupporting

confidence: 75%

“…Tromas et al [8] studied the change of mechanical properties of 4H-SiC implanted with 50 keV He ions and found that amorphization decreases the hardness of irradiated samples. The effects of many other kinds of ions, such as C ion, Fe ion, Ne ion, As ion and Cs ion irradiation on SiC materials have been studied as well [9][10][11][12][13]. Compared with the extensive study of single-ion irradiation, the study for dual-ion irradiation is limited.…”

Section: Introductionmentioning

confidence: 99%

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Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Bai

Cheng

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: X-ray Diffractionsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Bai

Cheng

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…The hardness and elastic (Young's) modulus were measured and are shown in Figure 2. The evolution of hardness generally caused by ion implantation depends on the competition between the behavior of two effects [29,30]: on the one hand, dislocation motion can be hindered by high-density defects induced by ion implantation and increased hardness, called radiation hardening; on the other hand, the crystalline lattice can be destroyed by the ion implantation process, reducing the bond's density and hardness. As shown in Figure 2a, the hardness slightly increases after H and C ions implantation, which means that the radiation hardening effect of the implanted Nd:YLF samples was slightly stronger.…”

Section: Resultsmentioning

confidence: 99%

Lattice Damage, Optical and Electrical Properties Induced by H and C Ions Implantation in Nd:YLF Crystals

Qiao,

Wang,

Liu

et al. 2024

Crystals

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Neodymium-doped yttrium fluoride crystal has emerged as one of the most valuable functional materials, and has thus become a research hotspot and shown promising application value in recent years. In this work, utilizing 460 keV H and 6.0 MeV C ions implantation, the damage behavior, lattice structure change, spectral, and electrical characteristics of the Nd:YLF crystal induced by electronic and nuclear energy loss were investigated, utilizing complementary characterization techniques (X-ray diffraction, hardness and elastic (Young’s) modulus, micro-Raman, absorption, fluorescence spectra, and I–V characteristic curve). Thus, the annealing effect on the waveguide properties and the surface damage of the samples was discussed. The fabricated waveguide structure shows potential application in highly sensitive optoelectronic sensors.

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“…In contrast, the broad tails at a high diffraction angle represent the compressive strain induced by the formation of V Si , V C or/and their clusters. In terms of Bragg's law, the positions of the peak shoulders are usually utilized to quantify the elastic strain (ε) in terms of the relation ε = −∆d/d = 1-sinθ Bragg /sinθ, where d is the lattice constant of the unperturbed layer, θ and θ Bragg are the corresponding diffraction angles of the perturbed and unperturbed layers [38].…”

Section: Resultsmentioning

confidence: 99%

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Liu¹,

Ren²,

Wang³

et al. 2023

J. Phys. D: Appl. Phys.

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Single-photon emitters based on intrinsic defects in silicon carbide (SiC) are promising as solid-state qubits for the quantum information storage, whereas defect engineering in a controllable manner still remains challenging. Herein, the thermally-driven defect dynamic reaction in the ion implanted 4H-SiC has been exploited through the optical emission spectra of defects. For the heavy-ion (Si or Ar) implanted samples with abundant Frenkel pairs, the silicon vacancies (VSi) are energetically converted into the carbon antisite-vacancy pair (CSi-VC) upon annealing till 1300 °C for 30 min, accompanied with the gradual lattice recovery and local strain relaxation. The further temperature elevation dissociates the metastable CSi-VC into carbon antisite (CSi) and carbon vacancy (VC), as supported by the consequent quenching of the (CSi-VC)-related emission at 700 nm. Thus, the whole defect reaction is probed as the vacancy interconversion from VSi to VC with the byproduct of stacking faults. In contrast, the intermediate CSi-VC complexes are not energetically favorable during the annealing of the H-implanted sample, which results from the negligible generation of Frenkel pairs, as supported by the x-ray diffraction patterns and Raman scattering analysis. These findings provide guidance for defect engineering in SiC toward the creation of reliable single photon emitters.

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A HRXRD and nano-indentation study on Ne-implanted 6H–SiC

Cited by 25 publications

References 28 publications

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Lattice Damage, Optical and Electrical Properties Induced by H and C Ions Implantation in Nd:YLF Crystals

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

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