Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Bai, Qingwen; Li, L.; Cheng, Feng; Bin, R.; Fa, Tao; Fu, Engang; Yao, Shuo

doi:10.1016/j.nimb.2015.08.027

Cited by 5 publications

(1 citation statement)

References 20 publications

(26 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The bubble density in the samples irradiated by He and H is larger than that observed with single-ion irradiation, which would be attributed to the wide distribution of H nano-cracks in the vertical direction and the decrease in elastic modulus of the irradiated layer caused by He implantation. Bai et al [20] studied the microstructure and mechanical properties of 6H-SiC irradiated by He and H ions. They found that He and H ion irradiation caused lattice deformation, and the lattice disorder recovered slightly after annealing, indicating that H ion irradiation retards the recovery of lattice defects.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

You

Lin

et al. 2022

Materials

View full text Add to dashboard Cite

Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation is a good method. He and H co-implantation into Si can efficiently enhance exfoliation efficiency compared to only H implantation. In this study, 6H-SiC single crystals were implanted with He+ and H2+ dual beams at room temperature, followed by annealing at 1100 °C for 15 min, and irradiations with 60 keV He ions with a fluence of 1.5 × 1016 ions/cm−2 or 5.0 × 1016 ions/cm−2 and 100 keV H2+ ions with a fluence of 5 × 1016 ions/cm−2 were carried out. The lattice disorder was characterized by both Raman spectroscopy and transmission electron microscopy. The intensity of Raman peaks decreased with increasing fluence. No Raman shift or new phases were found. A very high numerical density of bubbles was observed as compared to single H or He implantation. Moreover, stacking faults, Frank loops and tangled dislocations were formed in the damaged layer. Surface exfoliation was inhibited by co-implantation. A possible reason for this is an increase in fracture toughness and a decrease in elastic out-of-plane strain due to dense bubbles and stacking faults.

show abstract

Section: Introductionmentioning

confidence: 99%