A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

Çіçek, Osman; Altındal, Ş.; Azizian‐Kalandaragh, Yashar

doi:10.1109/jsen.2020.3009108

Cited by 51 publications

(20 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SDs can be created on both n-type and p-type conductivity semiconductors, but n-type conductivity is preferable due to the higher electron mobility [56]. The current through the SD thus obtained was analysed in terms of the thermionic emission diffusion equation or Richardson equation [17,18,34,[57][58][59]:…”

Section: Development Of Psd Chipmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov¹

2021

Preprint

View full text Add to dashboard Cite

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

show abstract

Section: Development Of Psd Chipmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov¹

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…SDs can be created on both n-type and p-type conductivity semiconductors, but n-type conductivity is preferable due to the higher electron mobility [57]. The current through the SD thus obtained was analysed in terms of the thermionic emission diffusion equation or Richardson equation [17,18,34,[58][59][60]:…”

Section: Development Of Psd Chipmentioning

confidence: 99%

“…Schottky diode (SD) temperature sensors should be noted separately, because their constructions are extensive. SDs use epitaxial silicon [19,25,[27][28][29] and polysilicon structures [11] of n -or p-type conductivity with array of different metal, silicon carbide 4H-SiC with barrier metal of Ni [16,20], Ti [30,31], Pt [32] and V2O5 [18], as well as working layers of GaN [17,33] or graphene [34,35] and many other combinations. Semiconductor structures and sapphire [17] or diamond [19] insulators were chosen as substrate for developments.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Schottky diode temperature sensor for pressure sensor

Basov

2021

Preprint

View full text Add to dashboard Cite

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

show abstract

“…To obtain detailed information about the nature of the barrier formed at the metal-semiconductor interface and the conductivity process, current-voltage measurements in a wide temperature range have been used in recent studies. [13][14][15][16][17][18][19] The analysis of cryogenic temperature is necessary because the sensors of night vision cameras and infrared detectors operating at very low temperatures usage Schottky diodes with the low barrier height. The investigated current-voltage properties of Schottky barrier diodes generally change from the ideal thermionic emission method due to the strong dependence of both ideality factor and barrier height on temperature.…”

mentioning

confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

show abstract

A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

Cited by 51 publications

References 32 publications

Schottky diode temperature sensor for pressure sensor

Schottky diode temperature sensor for pressure sensor

Schottky diode temperature sensor for pressure sensor

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Contact Info

Product

Resources

About