A highly rugged 19 dBm 28GHz PA using novel PAFET device in 45RFSOI technology achieving peak efficiency above 48%

Syed, S.; Jain, S.; Lederer, Dimitri; Liu, Wen; Veeramani, Elanchezhian; Chandhoke, Baljit; Kumar, Arvind; Freeman, G.

doi:10.1109/ims30576.2020.9223861

Cited by 10 publications

(2 citation statements)

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“…Two reliability measurements are performed on the power amplifiers based on [4] to see if any break down occurs: a soft stress test corresponding to a short 27 min of stress loading VSWR 4:1 and a hard test corresponding to 15 hours of stress, same load.…”

Section: B Vswr Ruggedness Methodologymentioning

confidence: 99%

Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies

Bossuet

Divay

Martineau

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

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This paper reports the VSWR (Voltage Standing Wave Ratio) ruggedness and aging measurements of two power amplifiers designed in 22FDX and 45RFSOI technologies. The PA is one of the most critical function in a front-end module as it is operating at high power and directly impacted by mismatch load. De-rating of 20% is applied on the supply voltage to ensure the operation and durability of the power amplifiers for a 10 years lifetime. The measured and modelled degradation versus time are presented and show excellent results on both technologies.

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Section: B Vswr Ruggedness Methodologymentioning

confidence: 99%

Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies

Bossuet

Divay

Martineau

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

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“…In this work, we present a two stages PA based on the stack topology using the recently added PAFET drain extended devices that present improved hot carrier injection (HCI) performances and an improved off-state junction breakdown [1]. In any power amplifier in class A, AB or B, the drain to source RF voltage swing of the output stage is 2xVsupply.…”

Section: Power Amplifier Designmentioning

confidence: 99%

A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology

Bossuet

Martineau

Dehos

et al. 2022

2021 16th European Microwave Integrated Circuits Conference (EuMIC)

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This paper describes a highly rugged poweramplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI). By using device stacking technique together with an optimized supply voltage reduction, the power amplifier achieves 20 dBm Psat and 23 % PAEmax. A Pavg of 10 dBm and a PAEavg of 8% is achieved in 64-QAM 200MHz bandwidth OFDM at EVMavg of 6.2% (-24.1dB) without the use of digital predistortion. The 4:1 VSWR measurement shows an excellent PA reliability even under the worst mismatch condition. These results enable an efficient, high power and highly reliable power amplifier for 5G applications.

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