This paper describes a highly rugged poweramplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI). By using device stacking technique together with an optimized supply voltage reduction, the power amplifier achieves 20 dBm Psat and 23 % PAEmax. A Pavg of 10 dBm and a PAEavg of 8% is achieved in 64-QAM 200MHz bandwidth OFDM at EVMavg of 6.2% (-24.1dB) without the use of digital predistortion. The 4:1 VSWR measurement shows an excellent PA reliability even under the worst mismatch condition. These results enable an efficient, high power and highly reliable power amplifier for 5G applications.
This paper reports the VSWR (Voltage Standing Wave Ratio) ruggedness and aging measurements of two power amplifiers designed in 22FDX and 45RFSOI technologies. The PA is one of the most critical function in a front-end module as it is operating at high power and directly impacted by mismatch load. De-rating of 20% is applied on the supply voltage to ensure the operation and durability of the power amplifiers for a 10 years lifetime. The measured and modelled degradation versus time are presented and show excellent results on both technologies.
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