A Highly Manufacturable Large Area Array MEMS Probe Card Using Electroplating and Flipchip Bonding

Kim, Bong-Hwan; Kim, Jong-Bok; Kim, Jong-Hyun

doi:10.1109/tie.2008.2003366

Cited by 32 publications

(2 citation statements)

References 22 publications

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“…Figure 12 shows an application of the proposed fabrication technique. The MEMS probe card has a 4.75 inch × 4.75 inch area and more than 10 000 probe structures [33,34].…”

Section: Applicationmentioning

confidence: 99%

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

Kim¹,

Kim²

2009

J. Micromech. Microeng.

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We have developed a microfabrication process for high aspect ratio thick silicon wafer molds and electroplating using flipchip bonding with THB 151N negative photoresist (JSR micro). This fabrication technique includes large area and high thickness silicon wafer mold electroplating. The process consists of silicon deep reactive ion etching (RIE) of the silicon wafer mold, photoresist bonding between the silicon mold and the substrate, nickel electroplating and a silicon removal process. High thickness silicon wafer molds were made by deep RIE and flipchip bonding. In addition, nickel electroplating was developed. Dry film resist (ORDYL MP112, TOK) and thick negative-tone photoresist (THB 151N, JSR micro) were used as bonding materials. In order to measure the bonding strength, the surface energy was calculated using a blade test. The surface energy of the bonding wafers was found to be 0.36-25.49 J m −2 at 60-180 • C for the dry film resist and 0.4-1.9 J m −2 for THB 151N in the same temperature range. Even though ORDYL MP112 has a better value of surface energy than THB 151N, it has a critical disadvantage when it comes to removing residue after electroplating. The proposed process can be applied to high aspect ratio MEMS structures, such as air gap inductors or vertical MEMS probe tips.

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“…Figure 12 shows an application of the proposed fabrication technique. The MEMS probe card has a 4.75 inch × 4.75 inch area and more than 10 000 probe structures [33,34].…”

Section: Applicationmentioning

confidence: 99%

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

Kim¹,

Kim²

2009

J. Micromech. Microeng.

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show abstract

“…In addition, conventional probe cards that house bulky single probes are limited in terms of their shape and the number of array tips they can accommodate [ 2 ]. Advanced probe card pins fabricated using MEMS processing have been studied to solve this problem [ 3 , 4 ], but these are also characterized by certain limitations, such as the need for overdrive [ 5 ] during the measurement process and the susceptibility of the fine tips to being worn out [ 6 ]. As a result of these limitations, pogo pin products that use spring compression instead of RF probe tips have emerged as an alternative design choice that offers high durability.…”

Section: Introductionmentioning

confidence: 99%

Low-Loss Pogo Pin Probe Card with a Coupling Isolation Structure up to 50 GHz

Lee

Ahn

Park

et al. 2023

Sensors

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A design for a millimeter wave RF probe card that removes resonance is proposed. The designed probe card optimizes the position of the ground surface and the signal pogo pins to resolve the resonance and signal loss issues that occur when connecting a dielectric socket and a PCB. At millimeter wave frequencies, the height of the dielectric socket and pogo pin matches the length of half a wavelength, allowing the socket to act as a resonator. When the leakage signal from the PCB line is coupled to the 2.9 mm high socket with pogo pins, resonance at a frequency of 28 GHz is generated. The probe card uses the ground plane as a shielding structure to minimize this resonance and radiation loss. The importance of the signal pin location is verified via measurements in order to address the discontinuity caused by field polarity switching. A probe card fabricated using the proposed technique exhibits an insertion loss performance of −8 dB up to 50 GHz and eliminates resonance. A signal with an insertion loss of −3.1 dB can be transmitted to a system-on-chip in a practical chip test.

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Wiring techniques for large size silicon probe using electroplating

Aono

Kanamaru

Kohno

et al. 2020

Elect Comm in Japan

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To realize an uniformization of wiring thickness on a large size silicon probe, a design of wiring to supply current and electroplating conditions were analytically and experimentally evaluated. Circuit simulations adopted with nonlinear resistance elements clarified the distribution of current density on silicon probes. The voltage drop of current supply wiring on the silicon probe was necessary to be decreased to uniformize the thickness of wirings. Thus, the resistance of current supply wiring was decreased, and the bypass wirings were set on the silicon probe for decreasing the current distribution. As a result, the thickness of wirings was uniformized in the thick deviation of less than 1 µm on the silicon probe units. The experiments were qualitatively consistent with the circuit simulations.

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A Highly Manufacturable Large Area Array MEMS Probe Card Using Electroplating and Flipchip Bonding

Cited by 32 publications

References 22 publications

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

Low-Loss Pogo Pin Probe Card with a Coupling Isolation Structure up to 50 GHz

Wiring techniques for large size silicon probe using electroplating

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