2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)
DOI: 10.1109/vlsit.2002.1015384
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A highly manufacturable 110 nm DRAM technology with 8F/sup 2/ vertical transistor cell for 1Gb and beyond

H. Akatsu
1
,
R. Weis2,
Kuang-Fu Cheng3
et al.
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