A highly linear single balanced mixer based on heterojunction interband tunneling diode

Cidronali, Alessandro; Collodi, Giovanni; Deshpande, M. R.; El‐Zein, N.; Nair, V.; Manes, G.; Goronkin, H.

doi:10.1109/22.971633

Cited by 6 publications

(4 citation statements)

References 19 publications

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“…17(a) and (b), where the HITDs are represented by their equivalent impedance with a negative real part. Defining as the directional-coupler impedance seen by the HITD and as the diode negative dynamic resistance, a simple calculation shows that the BDA gain is gain (8) where is the reflection coefficient seen by the diode toward the directional coupler. Equation (8) shows that the amplifier gain depends on the matching between the system impedance and the diode negative resistance .…”

Section: A Circuit Topology and Featuresmentioning

confidence: 99%

“…Defining as the directional-coupler impedance seen by the HITD and as the diode negative dynamic resistance, a simple calculation shows that the BDA gain is gain (8) where is the reflection coefficient seen by the diode toward the directional coupler. Equation (8) shows that the amplifier gain depends on the matching between the system impedance and the diode negative resistance . The value can be selected by adjusting either the diode characteristic or the directional coupler characteristic [30].…”

Section: A Circuit Topology and Featuresmentioning

confidence: 99%

“…The main applications already implemented are mixers [8], frequency multipliers [9], and oscillators [10]. The TD has also been used to provide a proof-of-concept of new circuits, such as the monolithically integrated bidirectional amplifier [11], which reduces the circuit complexity and increases the performances of RF identifications (RF IDs).…”

Section: Introductionmentioning

confidence: 99%

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MMIC applications of heterostructure interband tunnel devices

Cidronali

Nair

Collodi

et al. 2003

IEEE Trans. Microwave Theory Techn.

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This paper deals with recent achievements in the field of an emerging technology termed the quantum monolithic microwave integrated circuit (QMMIC). QMMIC consists of a heterojunction interband tunneling diode and a high electron-mobility transistor monolithically integrated to obtain a new functional device. This technology enables the realization of low-voltage, high-density, and high-functionality circuits. A detailed description of the design and analysis techniques for several circuits such as an amplifier, an oscillator, and a mixer, along with the analytical treatment of the principle of operation are given in this paper. A number of prototypes implemented in InP technology constitute the proof-of-concept of the unique features of QMMIC circuit blocks for low-power wireless systems.Index Terms-Linear mixer, low power, monolithic microwave integrated circuit (MMIC), quantum-well devices, RF identification (RF ID), voltage-controlled oscillator (VCO).

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Section: A Circuit Topology and Featuresmentioning

confidence: 99%

Section: A Circuit Topology and Featuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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MMIC applications of heterostructure interband tunnel devices

Cidronali

Nair

Collodi

et al. 2003

IEEE Trans. Microwave Theory Techn.

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“…QDs like tunneling diodes (TDs) have demonstrated the potential for highest speed-lowest power consumption operation. Several microwave circuit using QDs have been demonstrated: bidirectional amplifier [3], mixer [4], frequency multiplier [5] and oscillators [a].…”

Section: Introductionmentioning

confidence: 99%

Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

Cidronali

Collodi

Camprini

et al.

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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The monolithic integration of tunneling diodes 0 s ) with other semiconductor devices such as HEMTs or HBTS, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT\TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.7511~4 at 5OOmV and generates an output power of -16dBm The maximum tuning range is 15OMHz and the single sideband-twarrier ratio (SSCR) is of -1OSdBdHz at 5MHz. n++ -I~AIAS

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Negative Differential Resistance Devices and Circuits

Berger

Anisha

2011

Comprehensive Semiconductor Science and Technology

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A highly linear single balanced mixer based on heterojunction interband tunneling diode

Cited by 6 publications

References 19 publications

MMIC applications of heterostructure interband tunnel devices

MMIC applications of heterostructure interband tunnel devices

Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

Negative Differential Resistance Devices and Circuits

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