A High-T<sub>c</sub> Superconductor Bolometer for Remote Sensing of Atmospheric OH

Nivelle, M.J.M.E. de; Bruijn, M. P.; Frericks, M.; Vries, R. de; Wijnbergen, J. J.; Korte, P. A. J. de; Sanchez, Stefan; Elwenspoek, M.; Heidenblut, T.; Schwierzi, B.; Michalke, W.; Steinbeiß, E.

doi:10.1051/jp4:1996364

Cited by 3 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The starting substrate for the bolometer production is a Si wafer containing a silicon-on-nitride (SON) layer consisting of a 300-nm-thick monocrystalline Si layer on top of a 1mthick silicon nitride layer. This SON layer has been specially developed for this project and is made with a bond-and-etchback technique involving a fusion bonding step between Si N and Si [7], [8] (Fig. 1).…”

Section: B Silicon-on-nitridementioning

confidence: 99%

A high-T/sub c/ superconductor bolometer on a silicon nitride membrane

Sanchez

Elwenspoek

Chen

et al. 1998

J. Microelectromech. Syst.

View full text Add to dashboard Cite

In this paper, we describe the design, fabrication, and performance of a high-T c GdBa 2 Cu3O 70 superconductor bolometer positioned on a 2-2 2-mm 2 1-m-thick silicon nitride membrane. The bolometer structure has an effective area of 0.64 mm 2 and was grown on a specially developed silicon-onnitride (SON) layer. This layer was made by direct bonding of silicon nitride to silicon after chemical mechanical polishing. The operation temperature of the bolometer is 85 K. A thermal conductance G = 3:3 1 10 05 W/K with a time constant of 27 ms has been achieved. The electrical noise equivalent power (NEP) at 5 Hz is 3.7 1 10 012 WHz 01=2 , which is very close to the theoretical phonon noise limit of 3.6 1 10 012 WHz 01=2 , meaning that the excess noise of the superconducting film is very low. This bolometer is comparable to other bolometers with respect to high electrical performance. Our investigations are now aimed at decreasing the NEP for 84-m radiation by further reduction of G and adding an absorption layer to the detector. This bolometer is intended to be used as a detector in a Fabry-Perot (FP)-based satellite instrument designed for remote sensing of atmospheric hydroxyl. [252] Index Terms-Bolometer, chemical mechanical polishing, high TC superconductor, infrared detector, noise properties, wafer bonding.

show abstract

Section: B Silicon-on-nitridementioning

confidence: 99%

A high-T/sub c/ superconductor bolometer on a silicon nitride membrane

Sanchez

Elwenspoek

Chen

et al. 1998

J. Microelectromech. Syst.

View full text Add to dashboard Cite

show abstract

“…A Si top layer of 300 ± 50 nm was made this way, which at this moment seems to be best obtainable result using a single etch stop. These layers will be used for the production of a high-T c superconductor bolometer [3,4]. In recent experiments successful bonding was achieved between commercially obtained 4 SOI wafers from AT&T successfully transferred to the nitride wafer by bonding and etch-back.…”

Section: Silicon-on-nitridementioning

confidence: 99%

“…Silicon nitride bonding is an interesting technology for the production of a high-T c superconductor bolometer, where bonding of Si x N y to Si is used to obtain a thin singlecrystal Si layer on top of a silicon nitride membrane [3,4]. The use of chemical-mechanical polishing (CMP) for the reduction of the surface roughness shows its importance in silicon wafer bonding [5].…”

Section: Introductionmentioning

confidence: 99%

Spontaneous direct bonding of thick silicon nitride

Sanchez

Chen

Elwenspoek

1997

J. Micromech. Microeng.

View full text Add to dashboard Cite

Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.

show abstract