Abstract:As manufacture process scales down rapidly, the design of ternary content-addressable memory (TCAM) requiring high storage density, fast access speed and low power consumption becomes very challenging. In recent years, many novel TCAM designs have been inspired by the research on emerging nonvolatile memory technologies, such as magnetic tunneling junction (MTJ), phase change memory (PCM), and memristor. These designs store a data as the resistive variable of a nonvolatile device, which usually results in limi… Show more
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