A high sensitivity surface-micromachined pressure sensor

Godovitsyn, I. V.; Amelichev, V. V.; Pankov, Vladimir

doi:10.1016/j.sna.2013.07.006

Cited by 22 publications

(15 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sensor model was established via ANSYS (Pittsburgh, PA, USA) and the pressure of 1MPa was uniformly applied on the surface of the diaphragm. Based on the finite element simulation results, as shown in Figure 1c, the stress concentration area on the diaphragm's surface The equivalent stress distribution on the square diaphragm under pressure can be expressed as Equation (3).…”

Section: Sensor Designmentioning

confidence: 99%

“…With the booming of control science and intelligent monitoring technology, the pressure sensor technology in extreme environments such as engines and oil drilling has received extensive attention from scholars [ 1 , 2 ]. Compared with capacitive, optical fiber, surface acoustic wave, and other types of sensors, piezoresistive pressure sensors have the advantages of the easiness of design configuration, small size, simple processing technology, and the wider linearity range [ 3 , 4 , 5 ]. Owing to the excellent piezoresistive effect of silicon (Si) and mature Si-based micro-electromechanical system (MEMS) processing technology, pressure sensors based on the Si-piezoresistive effect are currently the most commonly used.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Liang

Cheng

et al. 2021

Micromachines

View full text Add to dashboard Cite

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

show abstract

Section: Sensor Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Liang

Cheng

et al. 2021

Micromachines

View full text Add to dashboard Cite

show abstract

“…The piezoresistive pressure sensors were first demonstrated by Tufte et al in the 1960s [1] by using KOH etching. They may be made by bulk micromachining [2,3] or surface micromachining [4,5]. Also, wide-band gap semiconductors based piezoresistive pressure sensors have been proposed for hostile environments [6,7].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

Zhang

Guoping

et al. 2019

Journal of Sensors

View full text Add to dashboard Cite

This paper presents a piezoresistive barometric pressure sensor fabricated by using a Silicon-on-Nothing (SON) technology. Array of silicon trenches were annealed in hydrogen environment to form continuing crystalline silicon membrane over a vacuum cavity. Epitaxial growth on the silicon membrane is then completed for the desired thickness. All processes are CMOS compatible and performed on the front side of the silicon wafer. The piezoresistive barometric pressure sensor has been demonstrated with pressure hysteresis as low as 0.007%.

show abstract

“…In terms of the sensing mechanism, capacitive and piezoresistive transducers play a dominant role with the simple read-out, good reliability and integration [1][2][3]. Piezoresistive sensors possessed several advantages in comparison with capacitive counterparts such as the easiness of design configuration and the wider linearity range [4][5][6][7]. In the past four decades, Si remains as the most important material used for pressure sensors owing to its https://doi.org/10.1016/j.matdes.2018.07.014 0264-1275/© 2018 Elsevier Ltd. All rights reserved.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

et al. 2018

View full text Add to dashboard Cite

• A highly sensitive bulk silicon carbide pressure sensor was fabricated using a laser scribing method. • The sensor's sensitivity was obtained to be 10.83 mV/V/bar at 198 K and 6.72 mV/V/bar at 473 K. • The sensor shows a twofold increment of sensitivity in comparison with other silicon carbide pressure sensors. • The as-fabricated sensor exhibits excellent sensitivity, linearity and reproducibility from cryogenic to elevated temperatures.

show abstract

A high sensitivity surface-micromachined pressure sensor

Cited by 22 publications

References 5 publications

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Contact Info

Product

Resources

About