1982
DOI: 10.1109/t-ed.1982.20821
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A high-sensitivity solid-state image sensor using a thin-film ZnSe-Zn1-xCdxTe heterojunction photosensor

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Cited by 10 publications
(1 citation statement)
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“…Zinc selenide (ZnSe) is a wide-bandgap II–VI semiconductor that has garnered much attention in optoelectronic applications such as light-emitting diodes and photosensors. , Recent research focus has been centered on ZnSe as a promising platform for quantum computing through point defect manipulation, quantum structure construction, or a combination of these strategies. The majority of these recent quantum efforts have been devoted to halogen-doped, or specifically, chlorine-doped , and fluorine-doped ZnSe as a building block of quantum wells, which have exhibited ubiquitous donor-bound excitons as a stable single-photon source.…”
mentioning
confidence: 99%
“…Zinc selenide (ZnSe) is a wide-bandgap II–VI semiconductor that has garnered much attention in optoelectronic applications such as light-emitting diodes and photosensors. , Recent research focus has been centered on ZnSe as a promising platform for quantum computing through point defect manipulation, quantum structure construction, or a combination of these strategies. The majority of these recent quantum efforts have been devoted to halogen-doped, or specifically, chlorine-doped , and fluorine-doped ZnSe as a building block of quantum wells, which have exhibited ubiquitous donor-bound excitons as a stable single-photon source.…”
mentioning
confidence: 99%