2014 IEEE International Conference on Electron Devices and Solid-State Circuits 2014
DOI: 10.1109/edssc.2014.7061252
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A high-retention 2T embedded DRAM with cell-body toggle scheme

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“…This circuit technique enhances the data retention and the write disturbance immunity in a compact bit-area [12]. It also improves the read performance.…”
Section: Introductionmentioning
confidence: 99%
“…This circuit technique enhances the data retention and the write disturbance immunity in a compact bit-area [12]. It also improves the read performance.…”
Section: Introductionmentioning
confidence: 99%