A high-resistivity phase induced by swift heavy-ion irradiation of Bi: a probe for thermal spike damage?

Dufour, C.; Audouard, Alain; Beuneu, F.; Dural, J.; Girard, J.P.; Hairie, A.; Levalois, M.; Paumier, E.; Toulemonde, M.

doi:10.1088/0953-8984/5/26/027

Cited by 132 publications

(125 citation statements)

References 30 publications

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“…A͑r , t͒ is related to the kinetic energy of the projectiles thermalized in the electron system within about 10 −15 s. A͑r , t͒ is normalized to ensure that the integration in space and time is equal to the total energy loss S e . 34 The two differential equations are solved numerically as a function of space and time interval ͑dt͒, using the electronphonon coupling term g. 20,[34][35][36] The energy deposited on the electrons is followed assuming the known thermal conductivity. Via the specific heat, the difference in temperature between the electron and lattice subsystems ͓T e ͑r , t͒ − T a ͑r , t − dt͔͒ multiplied by ͑g ϫ dt͒ gives the part of the energy transferred to the atomic subsystem during dt.…”

Section: Criterion For Etchability and The Inelastic Thermal Spikementioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

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Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u A197u, T130e, A75s, S32, and F19). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to ∼150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Seth∼2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se>4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Seth if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.

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Section: Criterion For Etchability and The Inelastic Thermal Spikementioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

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“…The number of created defects was determined [4,9] by measuring in situ the resistivity increment ∆ρ as a function of the ion fluence Φ ×t, where Φ is the flux of incident particle and t -the time of irradiation. Such a number, normalized by the theoretical number of defects created by nuclear collisions (TRIM cascade [7]), is defined as the damage efficiency.…”

Section: Defect Annealingmentioning

confidence: 99%

“…Bismuth [4,11] material was especially experimentally studied to be compared with the inelastic thermal spike model due to its low value of energy to melt (∼ 0.38 eV/atom as compared to ∼ 0.75 eV/atom for Fe). As done for the iron, the rate of damage creation in Bi, irradiated at two different temperatures, 20 K and 100 K, was determined by measuring the resistivity increment ∆ρ in situ as a function of the ion fluence Φ × t. Applying also the same analysis, the damage efficiencies were plotted versus S e (Fig.…”

Section: Temperature Of Irradiation: Application To Bimentioning

confidence: 99%

“…A specific analysis of ∆ρ(Φ t ) curves [4], using a statistical approach [12], allows us to deduce the cylinder radius in which the defects are created (Fig. 4).…”

Section: Track Radiimentioning

confidence: 99%

“…It is only since the 90's that this model [4][5][6] was developed in details to describe the damage induced in all kind of materials, metallic or insulator, irradiated by swift heavy ions. A typical evolution of the energy loss [7] of swift heavy ions as a function of the beam energy is presented in Fig.…”

Section: Introductionmentioning

confidence: 99%

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The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model

2006

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A description of the inelastic thermal spike model is presented in order to correlate the energy deposited by swift heavy ions to the nanometric matter transformation induced in inorganic metallic and insulating materials. Knowing that insulator is more sensitive than metallic material and that amorphous material is in general more sensitive than a crystalline one, it appears evident that the electron-phonon coupling constant g plays a key role. It will be shown that in metallic material we are able to describe different phenomena with the same value of g: for example, track formation with defect annealing or sputtering of atoms. In insulators the emphasis is made on results obtained for amorphizable materials like SiO 2 quartz and for non-amorphizable ionic crystals like CaF2. Assuming that tracks result from a transient thermal process, a quantitative development of the model is proposed using the electron-atom mean free path λ (inversely proportional to the square root of g) as a free parameter. With this parameter it is possible to quantitatively describe track radii in a wide range of ion velocitieswhatever the bonding character of the crystal is -assuming specific criteria: tracks may result from a rapid quenching of a cylinder of matter in which the energy deposited on the lattice has overcome either the energy necessary to reach a quasi-molten phase in the case of amorphizable materials or the vaporization energy in the case of non-amorphizable materials. The evolution of the λ parameter of the considered insulator decreases versus the band gap energy. In this model, velocity effect, and a link between track formation and sputtering of atoms is established for amorphizable insulators while open questions appear for ionic crystals.

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Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Mammeri

Msimanga

Dib

et al. 2017

Surface & Interface Analysis

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The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26-MeV range and the ion fluence ϕ from 5.1 × 10 13 cm −2 to 3.4 × 10 15 cm −2 . The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2-MeV He + ion beam. The measured sputtering yields versus Cu 7+ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ-values flowed by a steady-state regime above~1.6 × 10 14 cm −2 , similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of~2.6 × 10 15 cm −2 in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films. KEYWORDS electronic sputtering yield, nuclear and electronic stopping power, Rutherford backscattering spectrometry (RBS), inelastic thermal spike model, sss

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A high-resistivity phase induced by swift heavy-ion irradiation of Bi: a probe for thermal spike damage?

Cited by 132 publications

References 30 publications

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

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