A high-pressure ionization chamber

A comparative study of methods for thin-film and surface analysis

“…Techniques relying on ion sputtering entail disturbing effects like implantation and knock-in, ion cascade mixing, enhanced surface and bulk diffusion, preferential sputtering, charge-induced migration of mobile ions in insulating samples and changes of chemical state (for reviews see Hofmann (1980aHofmann ( , 1982, Betz et a1 (1981), Holloway and Bhattacharya (1981) and Williams and Baker (1981)). Such disturbing effects have been found even in static SIMS (Speckmann et a1 1982).…”

“…Since the sputtered particles are of atomic size, in-depth profiling with a near-atomic depth resolution should be obtainable in principle. The factors limiting the actually obtainable depth resolution are listed in table 5 (Hofmann et a1 1977, Hofmann 1980a, Holloway and Bhattacharya 1981, Jager 1981, Malherbe et a1 1981, Williams and Baker 1981, Magee et a1 1982, Werner 1982, Hofer and Littmark 1982, Wittmaack 1982a, Seah and Hunt 1983. The three categories of factors indicate that the obtainable depth resolution does not only depend on instrumental factors and ion-target interactions, but also on the sample constitution (Werner 1974).…”