2016
DOI: 10.1016/j.apsusc.2015.12.178
|View full text |Cite
|
Sign up to set email alerts
|

A high power ZnO thin film piezoelectric generator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
27
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 59 publications
(27 citation statements)
references
References 28 publications
0
27
0
Order By: Relevance
“…A topic broadly researched for undoped ZnO thin films is their application in FETs either in the conventional top-gate and bottom-gate approaches [159], or with junction interface engineering for increased mobility [160]. The piezoelectric properties of ZnO make it interesting for piezoelectric nanogenerators [161] for energy harvesting as well as surface acoustic wave generators and filters that are applied in a variety of sensors [162] and as microfluidic micropumps [163]. Memristors utilizing ZnO films are also researched, where the ferromagnetic metallic film is often sandwiched between two ZnO films and the magnetic switching occurs through interface oxidation of the Fe by creation of oxygen vacancies in ZnO [164].…”
Section: Thin Filmsmentioning
confidence: 99%
“…A topic broadly researched for undoped ZnO thin films is their application in FETs either in the conventional top-gate and bottom-gate approaches [159], or with junction interface engineering for increased mobility [160]. The piezoelectric properties of ZnO make it interesting for piezoelectric nanogenerators [161] for energy harvesting as well as surface acoustic wave generators and filters that are applied in a variety of sensors [162] and as microfluidic micropumps [163]. Memristors utilizing ZnO films are also researched, where the ferromagnetic metallic film is often sandwiched between two ZnO films and the magnetic switching occurs through interface oxidation of the Fe by creation of oxygen vacancies in ZnO [164].…”
Section: Thin Filmsmentioning
confidence: 99%
“…[11][12][13][14] Different approaches have been used for the fabrication of PENGs on nonflexible substrate such as GaN, 15 glass, 16,17 titanium foil, 18 and silicon. [19][20][21][22] However, these materials exhibit poor flexibility and deformation due to which PENGs are facing a challenge in practical applications. In addition, there has been rapid progress on fabricating stretchable or flexible PENGs based on ZnO nanorods.…”
Section: Introductionmentioning
confidence: 99%
“…The Li-doped Cu 2 O/ZnO synthesized by radio frequency magnetron sputtering was flexible and transparent. Moreover, PENGs with the ZnO TFs deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500°C generated a voltage, current and power of 95 mV, 35 ”A/cm 2 and 5.1 mW/cmÂČ, respectively (Qin et al, 2016a;2016b). The PENGs with Ga-doped ZnO NWs produced a higher voltage ranging from 120 to 560 mV (Zhao et al, 2015b) if compared with undoped ZnO NWs generated a lower voltage of up to 25 mV (Wang et al, 2008).…”
Section: Introductionmentioning
confidence: 98%
“…Meanwhile, ZnO Nanobelts (NBs) have bigger d 33 (14.3-26.7 pm/V) than that of ZnO Thin Films (TFs) synthesized by sputtering deposition (14 pm/V) (Dagdeviren et al, 2013). However, the ZnO TFs deposited onto a Si substrate by pulsed laser ablation has a high piezoelectric constant of 49.7 pm/V (Qin et al, 2016a;2016b) because it exhibited a preferred c-axis orientation. In addition, ZnO Nanorods (NRs) were reported have the d 33 ranging from 4.41 to 11.8 pm/V (Tamvakos et al, 2015) for single crystal and they further reached a highest value of 26.7 pm/V when measured for ZnO NBs (Zhao et al, 2004).…”
Section: Introductionmentioning
confidence: 99%