A high-power, broad-bandwidth 1310nm superluminescent diode with low spectral modulation

Wei, Jian; Park, Seoijin; Hu, Yimin; Enck, Ryan; Luciani, V.; Konoplev, Oleg A.; Wilson, S.; Heim, P.J.S.

doi:10.1117/12.646946

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2014

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“…To increase the SLD spectral width, some efforts have been made using quantum wells (QW) and quantumdashes (Qdash) [7], stacked twin active layers [8], asymmetric dual quantum wells [9], and self-assembled QDs [3]. Most researches on SLD focus on ∼0.8 μm [10], ∼1.3 μm [11] and ∼1.5 μm [12] wavelength. However, there are few discussions on the modulation bandwidth of SLDs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

Duan

Fang

Zhang³

et al. 2014

Semicond. Sci. Technol.

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A high speed 1053 nm superluminescent diode (SLD) with a ridge-waveguide structure has been fabricated for the first time to the best of our knowledge. InGaAs/GaAs quantum well epitaxial structure, the etched depth of the insulation channel and the area of p-side electrode were optimized to enhance the modulation bandwidth of the SLD. Bend-waveguide unpumped absorbing region structure and facet coating methods have been adopted to suppress the lasing oscillation. As a result, a −3 dB cutoff frequency of 1.7 GHz is obtained at a dc bias current of 100 mA and 25 • C heat-sink temperature, corresponding to 2.5 mW output power from single-mode fiber with spectral modulation of less than 0.15 dB and spectral width of 24 nm. The SLD module shows a good reliability.

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