A High Performance Solar-Blind Detector Based on Mixed–Phase Zn0.45Mg0.55O Alloy Nanowires Network

Ma, Sai; Feng, Shuanglong; Kang, Shuai; Wang, Feng; Fu, Xiangkai; Lu, Wenqiang

doi:10.1007/s13391-019-00121-2

Cited by 12 publications

(11 citation statements)

References 19 publications

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“…5a reveals the adsorption/desorption of oxygen molecules during the DUV response and recovery processes in the β-Ga 2 O 3 NWs. Eqn (10)–(12) describe the specific reaction process: 55 O 2 (g) + e − → O 2 − (ad) hv → e − + h + h + + O 2 − (ad) → O 2 (g) …”

Section: Resultsmentioning

confidence: 99%

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Feng

Zhang

et al. 2021

RSC Adv.

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Section: Resultsmentioning

confidence: 99%

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Feng

Zhang

et al. 2021

RSC Adv.

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“…It is obvious from the results that the photocurrent under UV illumination is significantly higher than that of nonillumination, implying that UV illumination could remarkably enhance the conductivity of the NRs network device. The responsivity ( R λ ) is defined as the ratio of the response current to the incident illumination power density …”

Section: Resultsmentioning

confidence: 99%

“…The number of charge carriers generated per incident photon under UV illumination can be expressed by the relation , where η is the external quantum efficiency of the device, R λ is the responsivity, and λ is the incident light wavelength. From the above relation, the values of η at λ = 380 nm and λ = 310 nm are calculated as 538 and 719%, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Fast-Response Metal–Semiconductor–Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

et al. 2021

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In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal–semiconductor–metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.

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“…A photodetector is a device that converts a light signal into an electrical signal output, and they play a vital role in various industrial and scientific fields such as sensing, communication, and imaging [ 1 , 2 , 3 , 4 , 5 , 6 ]. With a variety of photodetectors being developed, Ma et al developed a photodetector based on BaTiO 3 material, which exhibited an excellent pyroelectric effect, and output current/voltage signals were observed even under slight temperature fluctuations.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Photoresponse and Time-Response Characteristics of HDA-BiI5-Based Photodetectors

et al. 2022

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Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10−3 A/W and 8.5 × 10−4 A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.

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A High Performance Solar-Blind Detector Based on Mixed–Phase Zn0.45Mg0.55O Alloy Nanowires Network

Cited by 12 publications

References 19 publications

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Fast-Response Metal–Semiconductor–Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

Investigation of the Photoresponse and Time-Response Characteristics of HDA-BiI5-Based Photodetectors

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A High Performance Solar-Blind Detector Based on Mixed–Phase Zn0.45Mg0.55O Alloy Nanowires Network

Cited by 12 publications

References 19 publications

Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Fast-Response Metal–Semiconductor–Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

Investigation of the Photoresponse and Time-Response Characteristics of HDA-BiI5-Based Photodetectors

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Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Self-catalyst β-Ga₂O₃ semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors