A high performance self-driven photodetector based on a graphene/InSe/MoS<sub>2</sub> vertical heterostructure

Chen, Zhe‐Sheng; Zhang, Zailan; Biscaras, Johan; Shukla, Abhay

doi:10.1039/c8tc04378g

Cited by 43 publications

(23 citation statements)

References 28 publications

(18 reference statements)

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“…Similar to the TMD–TMD heterostructures, when group III chalcogenides such as GaTe, GaSe, InSe, and In 2 Se 3 are constructed with TMDs, typical type‐II band alignments with the excellent electron–hole pair separation ability are usually formed. [ 46–49 ] For group IV chalcogenides such as SnS 2 and SnSe 2 , band‐to‐band tunneling phenomena can be observed by applying various biases in a broken‐gap heterojunction. [ 50,51 ] In addition, due to the appropriate direct bandgap, large absorption coefficient, long carrier diffusion length, and high charge carrier mobility of perovskites, the heterostructures built by 2D TMDs and perovskite are found to exhibit significantly improved light absorption and carrier transport efficiency.…”

Section: Types Of Band Structures In 2d Tmd Heterostructuresmentioning

confidence: 99%

“…On the other hand, novel self‐driven photodetectors based on a graphene/InSe/MoS 2 heterostructure exhibits high photoresponsivity (110 mA W −1 ), and fast photoresponse (less than 1 ms) has been reported. [ 48 ] Zhou et al constructed SnSe 2 /MoS 2 ‐based vdW heterostructures using MoS 2 as the template, which show efficient interlayer charge transfer due to the strong coupling. [ 132 ] In addition, p‐WSe 2 and n‐SnS 2 have been calculated to be broken band alignments with the conduction band of SnS 2 , a little lower than the valence band of WSe 2 .…”

Section: Band Alignment Strategies and Mechanism In Photodetectorsmentioning

confidence: 99%

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Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

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The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to boost the overall photoelectric performance of photodetectors. In particular, the alignment of band structure at the interface of the binding materials plays a critical role in optimizing the carrier transfer path and prompting the charge separation rate, which finally lead to the simultaneous improvement of photoresponsivity and response rate and the expansion of detection range. However, the band alignment engineering topic has been barely summarized and reviewed in detail up to today. Herein, a specific review focused on the band alignment strategies and the related charge‐transfer mechanism of the recently developed novel TMD heterostructures for photodetectors is provided. The band structures are classified into four categories according to the targeted function of photodetectors, including that formed by TMDs with zero‐bandgap materials, narrow‐bandgap semiconductors, middle‐bandgap semiconductors, and wide‐bandgap semiconductors. The corresponding band alignment principles and charge‐transfer behaviors are summarized carefully by providing various latest research works as representative examples under each category. Herein, a key reference for applying and extending the fundamental band alignment principles in the design and fabrication of future TMD‐based heterostructural photodetectors is provided.

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Section: Types Of Band Structures In 2d Tmd Heterostructuresmentioning

confidence: 99%

Section: Band Alignment Strategies and Mechanism In Photodetectorsmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

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“…Specifically, upon 900 nm illumination, a responsivity of 14.1 mA W −1 is achieved, which, on the whole, lags behind the previously reported InSe‐based self‐powered heterojunction photodetectors (13.8–110 mA W −1 ). [ 277 , 278 , 279 , 280 ] The moderate performance is probably associated with the low interfacial built‐in electric field due to the far from optimized band alignment, which has also been validated by the inapparent rectification characteristic. In addition, this device not only displays a stable and reproducible photoresponse (Figure 11e ), but also showcases short response/recovery time less than 120 ms/120 ms (Figure 11f ).…”

Section: D Layered Materials Alloys For Photodetectionmentioning

confidence: 98%

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Yao

Yang

2021

Advanced Science

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2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

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“…Type of sensors Graphene materials The roles of graphene Electrochemical Strain sensor [21][22][23] Graphene foam, graphenepolymer composite film Flexible piezoresistive electrode with high conductivity and strain sensitivity Humidity sensor 24 Graphene oxide film High specific surface area, surface functional groups that can rapidly capture and transfer water molecules Photovoltaic Photodetector [25][26][27][28][29][30][31][32][33][34] Monolayer / few-layer graphene Coupling with other semiconductor surfaces to form various Schottky junctions Monolayer / few-layer graphene Transparent conductive electrode with excellent light transmission, conductivity and flexibility Gas sensor 35 Graphene film Doping effect on the adsorption of gas molecules Position sensor 36 Reduced graphene oxide film Lateral photovoltaic effect Triboelectric Deformation sensor [37][38][39] Graphene quantum dot, film Flexible conductive electrodes Pressure sensor 40 Graphene foam Highly sensitive piezoresistive performance Touch sensor 20,41 Monolayer graphene, interlocked percolative graphene Building capacitive sensing arrays or piezoresistive sensing arrays Humidity sensor 42 Graphene-SnS2 composite Moisture-sensitive conductive network Gas sensor 43 Graphene-metal oxide composite Gas-sensitive conductive network Hydrovoltaic Fluid sensor 9,44 Monolayer graphene Liquid flow-induced electricity (drawing potential) Concentration sensor 9,18 Monolayer graphene Ion adsorption on liquid-graphene interface Humidity sensor [45][46][47] Graphene oxide film or framework Surface functional groups interact with ambient moisture to generate electric signal Thermoelectric Strain sensor 48 Graphene-polymer composite film Thermoelectricity and excellent electromechanical coupling performance Tempera...…”

Section: Energy Supply Mechanismsmentioning

confidence: 99%

“…Adapted from Elsevier. (k) A graphene/InSe/MoS 2 photodetector 33 . Adapted with permission from Ref.…”

Section: Energy Supply Mechanismsmentioning

confidence: 99%

Applications of Graphene in Self-Powered Sensing Systems

Hu¹,

Hu²,

Liu³

et al. 2021

Acta Physico Chimica Sinica

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The advancements in the development of intelligent systems have resulted in an increase in the number, density, and distribution range of sensors. Traditional energy supply methods cannot meet the demands of the complex and variable sensor systems. However, the emergence of self-powered sensing devices that generate energy from their surroundings has provided a solution to this problem. Graphene, which has both an excellent sensing performance and wide range of applications in energy devices, facilitates the design of self-powered sensing systems. In recent years, several graphene-based self-powered sensors have been developed to overcome the design limitations of sensing systems. In this review, these sensors are divided into five categories according to their different energy conversion methods.(1) Self-powered by the electrochemical effect. The traditional electrochemical battery can be designed as a flexible structure that is responsive to external stimuli, including pressure, deformation, humidity, light, and temperature. It is an effective, stable, self-driving sensor, with working life determined by the amount of oxidizing/reducing agent present and the reaction rate. Flexible electrochemical cells with a high strain sensitivity ((I/I0)/ε = 124) and stretchability (2000%) have been achieved. (2) Self-powered by the photovoltaic effect. Graphene can form a Schottky junction when coupled with various semiconducting materials, such as Si, GaAs, MoS2, and some of their nanostructures. In these heterostructures, the van der Waals interface exhibits a Schottky barrier, which can separate photogenerated electron-hole pairs without external bias. Graphene-based Schottky junctions have been widely used as self-powered photodetectors with extremely high responsivities ( ~149 A•W −1 ). (3) Self-powered by the triboelectric effect. The contact and separation of two surfaces can result in the separation of charges due to the difference in electron affinities of the materials. This results in an induced electrostatic force between the electrodes, thereby driving the flow of electrons in an external circuit. Triboelectric nanogenerators can realize self-driving touch/pressure sensing and are used for several applications, including touch screens, neural finger skin, and electronic skin. (4) Self-powered by the hydrovoltaic effect. Graphene can interact with water at the solid-liquid interface and generate an electrical signal. Therefore, graphene-based hydrovoltaic devices can constitute very simple self-driving sensors that are efficient in determining fluid flow, solution concentration, and humidity, among others. (5) Self-powered by other effects, such as the thermoelectric effect, piezoelectric effect, or pyroelectric effect. Although the electrical signals generated by these effects are relatively weak, they can be used for some special applications, such as temperature or infrared sensors. Finally, we discuss the future developments, challenges, and prospects of graphene-based self-powered sensing devices and syste...

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A high performance self-driven photodetector based on a graphene/InSe/MoS₂ vertical heterostructure

Abstract: In a self-driven mode, a graphene/InSe/MoS2 photodetector exhibits high photoresponsivity, fast photoresponse and high operational stability under ambient conditions.

Cited by 43 publications

References 28 publications

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Applications of Graphene in Self-Powered Sensing Systems

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A high performance self-driven photodetector based on a graphene/InSe/MoS2 vertical heterostructure

Abstract: In a self-driven mode, a graphene/InSe/MoS2 photodetector exhibits high photoresponsivity, fast photoresponse and high operational stability under ambient conditions.

Cited by 43 publications

References 28 publications

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

Applications of Graphene in Self-Powered Sensing Systems

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A high performance self-driven photodetector based on a graphene/InSe/MoS₂ vertical heterostructure