A high performance RF power amplifier with protection against load mismatches

Scuderi, A.; Carrara, F.; Castorina, A.; Palmisano, G.

doi:10.1109/mwsym.2003.1212468

Cited by 8 publications

(2 citation statements)

References 4 publications

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“…The risk of breakdown can be prevented by simply attenuating the RF signal which drives the final stage during over voltage conditions [5], [6]. This can be achieved by adopting a feedback control system, which detects the peak voltage at the output collector node and decreases its value to a specific threshold by varying the circuit gain.…”

Section: Closed-loop Drain Peak Voltage Controlmentioning

confidence: 99%

A Novel VSWR-Protected and Controllable CMOS Class E Power Amplifier for Bluetooth Applications

Chen¹,

Wang²,

Huang³

2011

Preprint

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This paper describes the design of a differential class-E PA for Bluetooth applications in 0.18µm CMOS technology with load mismatch protection and power control features. The breakdown induced by load mismatch can be avoided by attenuating the RF power to the final stage during over voltage conditions. Power control is realized by means of "open loop" techniques to regulate the power supply voltage, and a novel controllable bias network with temperature compensated is proposed, which allows a moderate power control slope (dB/V) to be achieved. Post-layout Simulation results show that the level of output power can be controlled in 2dBm steps; especially the output power in every step is quite insensitive to temperature variations.

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Section: Closed-loop Drain Peak Voltage Controlmentioning

confidence: 99%

A Novel VSWR-Protected and Controllable CMOS Class E Power Amplifier for Bluetooth Applications

Chen¹,

Wang²,

Huang³

2011

Preprint

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“…In this paper we present protection circuits [2,3,4] that prevent over-voltage, and over-temperature conditions of the power transistor. An integrated voltage detector and temperature detector are used to monitor the collector peak voltage, and die temperature.…”

Section: Introductionmentioning

confidence: 99%

Ruggedness Improvement by Protection

Bezooijen

Graauw

Ruijs

et al. 2006

2006 Bipolar/BiCMOS Circuits and Technology Meeting

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Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2 W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143˚C to 112˚C when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm.Index Terms -Adaptive control, avalanche breakdown, over-voltage protection, power amplifiers, temperature.

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