A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge&lt;inf&gt;x&lt;/inf&gt;Sb&lt;inf&gt;y&lt;/inf&gt;Te&lt;inf&gt;z&lt;/inf&gt; phase change material

Cheng, Huai-Yu; Hsu, T. H.; Raoux, Simone; Wu, Jin-Shang; Du, Pei-Ying; Breitwisch, M.; Zhu, Yu; Lai, Erh-Kun; Joseph, Eric; Mittal, S.; Cheek, R.; Schrott, A. G.; Lai, Sheng-Chih; Lung, Hsiang-Lan; Lam, C.

doi:10.1109/iedm.2011.6131481

Cited by 53 publications

(62 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the same graph, data corresponding to conventional GST are also reported for sake of comparison. D-alloy and T-alloy results are among the best so far published on high temperature PCM [5][6][7][8][9][10]. The activation energy for crystallization has been evaluated for both compounds, by finding 3.45 eV and 4.30 eV for D-alloy and T-alloy respectively.…”

Section: Thermal Stabilitymentioning

confidence: 96%

“…Several works have recently addressed the limited retention of Phase Change Memory by proposing material engineering or dopants inclusion [5][6][7][8][9][10], but no mainstream has still been found. This paper is focused on two specific compositions in the Ge-rich region, namely D-alloy and T-alloy, whose crystallization temperature is respectively 250°C and 350°C, so definitely higher than reference GST.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

See 1 more Smart Citation

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

Section: Thermal Stabilitymentioning

confidence: 96%

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

“…On the other hand, ePCM should also feature data retention at high temperature, e.g., 150 • C in automotive applications, and during packaging, where the temperatures can rise above 250 • C for few minutes. To satisfy these tough reliability constraints, new chalcogenide materials with improved crystallization temperature were proposed, namely Ge-rich GeSbTe [6]- [8], C-doped GeTe [9] and SiO 2doped GeTe [10].…”

Section: Introductionmentioning

confidence: 99%

Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe

Ciocchini

Palumbo

Borghi

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

To satisfy the growing market demand for embedded non-volatile memory (eNVM), alternative solutions to Flash technology are currently under investigation. Among these, phase change memory (PCM) is attracting strong interest due to the low cost of integration with the CMOS front-end and good scalability. Embedded PCM (ePCM), however, must feature high reliability during both packaging and functional stages. This work studies reliability of PCM based on Ge-rich GeSbTe, providing evidence for resistance drift and decay in both the reset and set states. Set state instability is attributed to grain-boundary relaxation and grain growth. A unified model is presented, capable of predicting the reliability of set/reset states at elevated temperature.

show abstract

“…Such a stable h-phase would worsen the storage performance due to the large reset current 14 , big volume shrinkage 15 , supernormal mechanical stress 16,17 , and bad cyclability 18 . The specific local atomic arrangements in h-phase may be also an advantage in recently proposed interfacial phase change memory (iPCM) devices 19 , however in traditional T-cell structure 3 , phase change material is deposited without precision crystallographic texture control, and poor-quality interface with multiple grains in hphase requires substantially higher SET/RESET switching energy.…”

mentioning

confidence: 99%

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

et al. 2019

View full text Add to dashboard Cite

GeTe-Sb 2 Te 3 pseudobinary system, especially Ge 2 Sb 2 Te 5 alloy, is the most desirable material to be commercialized in phase change random access memory. Directly resolving the local atomic arrangement of Ge 2 Sb 2 Te 5 during intermediate steps is an effective method to understand its transition mechanism from face-centered-cubic to hexagonal phases. In this study, we provide insights into the atomic arrangement variation during face-centered-cubic to hexagonal transition process in Ge 2 Sb 2 Te 5 alloy by using advanced atomic resolution energy dispersive X-ray spectroscopy. Induced by thermal annealing, randomly distributed germanium and antimony atoms would migrate to the specific (111) layer in different behaviors, and antimony atoms migrate earlier than germanium atoms during the phase transition process, gradually forming intermediate structures similar to hexagonal lattice. With the migration completed, the obtained stable hexagonal structure has a partially ordered stacking sequence described as below:-Te-Sb x /Ge y-Te-Ge x /Sb y-Te-Ge x /Sb y-Te-Sb x /Ge y-Te-(x > y), which is directly related to the migration process. The current visual fragments suggest a gradual transition mechanism, and guide the performance optimization of Ge 2 Sb 2 Te 5 alloy.

show abstract

A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material

Cited by 53 publications

References 6 publications

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

Contact Info

Product

Resources

About