A High Performance Bulk Driven Quasi Floating Gate MOSEFT Based Current Mirror

Abstract

A high performance low voltage bulk driven quasi floating gate MOS based current mirror has been proposed. The combination of bulk driven and quasi FGMOS decreases the input impedance upto 120 Ω which is four times smaller than current mirror based on only bulk driven technique. The bandwidth has also been improved upto 173 MHz which is three folds of bandwidth of conventional bulk driven current mirror. Very high output impedance upto 1GΩ is achieved using self cascode technique in output section depending the value of factor m. Small signal analysis of proposed circuit verifies the simulated results. The circuit is simulated using 0.18μm CMOS technology with supply voltage of ±0.3V. The proposed current mirror is highly suitable for low voltage applications.

High-Linearity Self-Biased CMOS Current Buffer

“…A Differential Amplifier (DA) sets the input voltage at V dc and establishes a virtual ground at this node. The quasi-floating gate (QFG) approach is used to achieve class AB operation [23][24][25][26][27][28][29][30], since this technique requires no additional current and adds minimum hardware penalty, leading to a power efficient and compact solution. In static conditions, the bias current I Bias is determined by the dimensions of the PMOS (P-type metal-oxide-semiconductor) transistors M p1 and M p2 , which are diode-connected and equally sized.…”