A high-gain low-noise distributed amplifier with low DC power in 0.18-&amp;#x00B5;m CMOS for vital sign detection radar

Micro & Optical Tech Letters

2017

This article presents a novel wideband distributed power amplifier (DPA) implemented in a 0.18 μm CMOS technology. The DPA consists of a preamplifier and a medium‐power power amplifier (PA), and both of them are respectively composed of two distributed amplifiers (DAs), which have separate input artificial transmission lines (ATLs) but with their output ATLs shared to achieve wide frequency band. In the medium‐power PA, the large‐signal multigated transistor technology is applied to further improve the linear output power. Measurement results show that the DPA achieves 10.2 dB average associated gain from 2.5 to 22 GHz. The output power at 1‐dB output compression point (OP1dB) is more than 8 dBm over the frequency of 2–22 GHz, and the peak OP1dB is 12.6 dBm with the power‐added efficiency of 7.2% at 6 GHz.

Section: Circuit Designmentioning

confidence: 99%

“…With the cutoff frequency beyond 100 GHz, CMOS technology makes itself more competitive due to its much lower price for mass production. However, low breakdown voltage and high silicon substrate loss reduce the output power and efficiency of most reported CMOS Das, which impedes them to be integrated as wideband power amplifiers (PAs).…”

Section: Introductionmentioning

confidence: 99%

A 2–22 GHz CMOS wideband distributed power amplifier

Micro & Optical Tech Letters

2017

“…With the process down-scaling and the cutoff frequency extending beyond 100 GHz, CMOS technology has the advantages of integration with other radio frequency (RF) and baseband circuits on the same substrate toward system on chip (SoC) as compared to GaAs PHEMT technology [2,3] and GaN HEMT technology [4,5,6,7], and it becomes promising to design wideband DA on CMOS. One major deficiency of most reported CMOS DAs [7,8,9] is their low output power and efficiency due to the low breakdown voltage and the high silicon substrate loss, which impedes them to be integrated as PAs in SOC.…”

Section: Introductionmentioning

confidence: 99%

1–20 GHz distributed power amplifier based on shared artificial transmission lines

IEICE Electron. Express

Hua

et al. 2017

A 1-20 GHz distributed power amplifier (DPA) with a novel compact structure is designed and implemented in a commercial 0.18 µm CMOS technology. The proposed DPA consists of two distributed amplifiers (DAs), which have separate input artificial transmission lines (ATLs) but with their output ATLs shared to achieve high output power and efficiency in the wide frequency band. The gradually changed output ATL is used to further improve the power performance. Measurement results show that the DPA achieves 9.6 dB average associated gain from 1 to 20 GHz. The output power at 1-dB output compression point (OP 1dB ) is more than 8.2 dBm, and the peak power-added efficiency (PAE) is 9.6% with the OP 1dB of 12.9 dBm at 4 GHz.

“…With the cutoff frequency beyond 100 GHz, CMOS technology makes itself more competitive than other advanced process technologies such as GaAs PHEMT technology [1,2] and SiGe BiCMOS technology [3][4][5] because of its much lower price for mass production. However, one major deficiency of the most reported DAs [6][7][8] is their low output power and efficiency,which impedes them to be integrated for power amplifiers (PAs).…”

Section: Introductionmentioning

confidence: 99%

Erratum for: A Nonuniform Distributed Power Amplifier in 0.18-mm CMOS Technology

Microw. Opt. Technol. Lett.

et al. 2017

In addition, the references were mislabeled in the introduction of the paper. The correct references are labeled below: | I N T R O D U C T I O NWith the rapid development of wireless and optical communications, the continuous increase of data transfer rates especially for software defined radio system needs the amplifiers with wider bandwidth. Distributed amplifiers (DAs) provide an effective approach to extend the bandwidth and therefore are widely used in the design of ultra-wideband systems. With the cutoff frequency beyond 100 GHz, CMOS technology makes itself more competitive than other advanced process technologies such as GaAs PHEMT technology [1,2] and SiGe BiCMOS technology [3][4][5] because of its much lower price for mass production. However, one major deficiency of the most reported DAs [6-8] is their low output power and efficiency,which impedes them to be integrated for power amplifiers (PAs).