1–20 GHz distributed power amplifier based on shared artificial transmission lines

Zhang, Ying; Ma, Kaixue; Hua, Yang; Zhang, Yi; Guo, Yufeng

doi:10.1587/elex.14.20170198

Cited by 6 publications

(4 citation statements)

References 10 publications

(9 reference statements)

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“…It is commonly accepted that distributed topologies have poor output power and efficiency, and the multiple bandwidths achieved are attained at the expense of power and efficiency [4]. The actual study findings, however, demonstrate that the problems of low output power and efficiency of the distributed structure can be adequately overcome after years of development [5,6,7,8,9,10,11,12]. The continuous development of the cellular communication market ensures the application of LDMOS transistors, which promotes the continuous maturity of LDMOS technology and the continuous reduction of its cost.…”

Section: Introductionmentioning

confidence: 98%

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

Nan

Liu

Cong

et al. 2023

IEICE Electron. Express

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Based on the self-developed standard process RF-LDMOS device, a new ultra-wideband RF power amplifier is designed in this letter. The amplifier removes the absorbing resistor and capacitor series structure at the end of the drain. The stability of the circuit is enhanced by the pre-matching circuit. Considering the small impedance value of the RF high-power device, it is difficult to achieve broadband matching. The novel tapering drain transmission has been developed which overcomes the distributed amplifier's limitations of low power and efficiency. Ultrawideband RF amplifier has excellent output power and efficiency. The measurement results show that from 0.8-2.2GHz, under the condition of 28V power supply, the saturated output power is 43dBm (20W), the power gain is 10dB, the drain efficiency is about 30%-50%; The peak-to-average ratio is 8dB, and the ACPR is less than -41dBc when the linear output is 5W, proving the effectiveness of the new tapered drain structure to achieve broadband.

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Section: Introductionmentioning

confidence: 98%

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

Nan

Liu

Cong

et al. 2023

IEICE Electron. Express

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show abstract

“…However, even if CMOS has more optional topologies under the same integration area, the noise, linearity, and gain are not ideal due to the loss and carrier mobility of the silicon substrate and are often only applicable to the design of the receive link, which does not satisfy the high-power requirements of the transmitter branch. The other solution is the multi-module packaging system based on the III-V high electron mobility semiconductors reported in [19][20][21][22], but due to its inherent instability and the lack of an ideal active device similar to the PMOS complementary type, this results in its low integration and large chip size. Compared to CMOS, the high electron mobility of III-V semiconductor materials compensates for the poor performance of CMOS, though there are power consumption limitations and trade-offs between gain fluctuations and bandwidth [23].…”

Section: Introductionmentioning

confidence: 99%

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

Shan,

Fu,

Wang

2024

Micromachines

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This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5–8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.

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“…Due to the applicability of the stacked-FET [1,2,3] structure to the design of broadband RF PAs, a variety of scholars have developed broadband PAs with several typologies based on different processes such as CMOS [4,5,6], GaAs [7,8,9], and GaN [10,11,12]. Among them, GaAs is one of the most suitable mature processes for developing mid-power, high-linearity, and high-efficiency broadband PA. For typologies, the distributed amplifier has a superior bandwidth performance, while it is oversize and inefficient [11,12,13,14,15,16]. The resistive feedback amplifier has the benefit of flat gain and multi-octave bandwidth, with the demerits of ineffective output power and power-added efficiency [17,18,19,20].…”

Section: Introductionmentioning

confidence: 99%

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

Yu¹,

Li²,

Liu³

et al. 2022

IEICE Electron. Express

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In this letter, a 30 MHz-3 GHz 1 W ultra-broadband stacked power amplifier (PA) fabricated in 0.25 um GaAs pHEMT technology process is presented. By inserting an RC network between the bridge-T input lossy matching network and the stacked-FET, the stability enhancement and input standing wave ratio (SWR) optimization are achieved with high frequency gain compensation. Based on the performance simulations of the stacked-PA with various normalized output load impedance, an optimal output matching method is applied, which obtains 31±1 dBm output power at 15 dBm input power, while the peak PAE achieves 60.2% at 30 MHz and the PAE larger than 35% over all of the operating frequency band. Moreover, the size of MMIC PA achieves 1.51 mm 2 with 50 Ω input and output matching.

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1–20 GHz distributed power amplifier based on shared artificial transmission lines

Cited by 6 publications

References 10 publications

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

Design of a 0.8-2.2GHz ultra-wideband RF high power amplifier

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

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