A high efficiency V-band monolithic HEMT power amplifier

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAsPHEMTs

“…While hot-electron related reliability issues have been widely studied in Si MOS devices and integrated circuits, the behavior of compound semiconductor FETs is much less assessed. In particular, devices such as AlGaAs=InGaAs=GaAs pseudomorphic high electron mobility transistors (PHEMTs) have been proved successful in a variety of applications, including low noise amplifier at Q-band [1], V-band monolithic power amplifiers [2], and MMIC power amplifiers at Ka-band [3] and W-band [4]. The use of the AlGaAs=InGaAs heterojunction in PHEMTs provides several advantages over MESFETs and conventional AlGaAs=GaAs HEMTs, and the advantages include: (1) larger conduction band discontinuity, which ensures better electron confinement; (2) the excellent electronic transport properties of InGaAs, which allow improved frequency performances.…”