A high efficiency GaAs power amplifier module with a single voltage for digital cellular phone systems

Nishida, M.; Murai, S.; Uda, H.; Tominaga, Hideki; Sawai, Terumitsu; Ibaraki, A.

doi:10.1109/mwsym.1998.705028

Cited by 8 publications

(2 citation statements)

References 3 publications

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“…In recent years, low cost and single power supply are required for power amplifiers used in mobile and satellite communication systems in addition to high efficiency [1]- [6]. Several personal communication services are provided, such as GSM, DCS, etc., and the multi-mode handsets which can be switched automatically across the different services are necessary [7].…”

Section: Introductionmentioning

confidence: 99%

A GSM900/1800 Dual-Band MMIC Power Amplifier Using-Outside-Base/Center-Via-Hole Layout Multi-finger HBT

Mori

Choumei

Shimura

et al. 1999

29th European Microwave Conference, 1999

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A GSM900/1800 Dual-Band AlGaAs /GaAs HBT(Hetero-junction Bipolar Transistor) MMIC power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and d.c. switch. A novel multi-finger HBT layout which can realize uniform output load impedance and thermal distribution of each HBT finger are applied to the final-stage HBT in order to achieve high efficiency. The developed MMIC amplifier has provided output power of 34.5dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.OdBm and power-added efficiency of 41.8% for DCS1800.

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Section: Introductionmentioning

confidence: 99%

A GSM900/1800 Dual-Band MMIC Power Amplifier Using-Outside-Base/Center-Via-Hole Layout Multi-finger HBT

Mori

Choumei

Shimura

et al. 1999

29th European Microwave Conference, 1999

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“…In Figure 1, the required transmit spectrum mask for the standard wireless LAN system is presented [9]. Figure. 1 Wireless LAN transmit spectrum mask [9].…”

Section: Modeling and Designmentioning

confidence: 99%

ACPR comparison of low pass and band pass type power amplifier for 22 Mbps wireless LAN application

Kuo

Jung²,

Park³

et al.

RAWCON 2000. 2000 IEEE Radio and Wireless Conference (Cat. No.00EX404)

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A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

Yamamoto

Suzuki

Mori

et al. 2000

IEEE J. Solid-State Circuits

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A high efficiency GaAs power amplifier module with a single voltage for digital cellular phone systems

Cited by 8 publications

References 3 publications

A GSM900/1800 Dual-Band MMIC Power Amplifier Using-Outside-Base/Center-Via-Hole Layout Multi-finger HBT

A GSM900/1800 Dual-Band MMIC Power Amplifier Using-Outside-Base/Center-Via-Hole Layout Multi-finger HBT

ACPR comparison of low pass and band pass type power amplifier for 22 Mbps wireless LAN application

A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

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