A High-Efficiency Dimmable LED Driver for Low-Power Lighting Applications

Chiu, Huang‐Jen; Lo, Yu‐Kang; Chen, Jun-Ting; Cheng, Sui Sun; Lin, Chung-Yi; Mou, Shann-Chyi

doi:10.1109/tie.2009.2027251

Cited by 400 publications

(44 citation statements)

References 23 publications

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“…1 GaN power switching field-effect transistors (FETs), such as metaloxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSCHEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, [2][3][4] and can be very useful as output devices for emerging applications of high power-high voltage LED systems. Ultimately, monolithic integration of GaN-based LEDs and GaN power HEMTs can reduce the cost and the size of solid state lighting systems, improve system reliability, and serve as a technology platform for the development of light-emitting power integrated circuits (LEPICs).…”

mentioning

confidence: 99%

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Waldron

Detchprohm

et al. 2013

Applied Physics Letters

104

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We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration of layers typical for a GaN-based LED grown directly on top of the layers of a GaN-based HEMT. The layers were then fabricated into a serially connected pair of GaN LED and metal-oxide-semiconductor-gated 0.3 lm-channel HEMT by exposing the LED/HEMT epitaxial layers in selective area etching. The resulting monolithically integrated circuit shows a full gate voltage modulation of the light output power. This demonstrates compatibility of group-III nitride LED and HEMT processes. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4807125]GaN-based high-power light-emitting diodes (LEDs) used in lighting applications typically require dedicated electronic driver circuits for AC-DC power conversion, current sourcing, and dimming using pulse-width modulation (PWM) or analog current control methods. 1 GaN power switching field-effect transistors (FETs), such as metaloxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSCHEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, 2-4 and can be very useful as output devices for emerging applications of high power-high voltage LED systems. Ultimately, monolithic integration of GaN-based LEDs and GaN power HEMTs can reduce the cost and the size of solid state lighting systems, improve system reliability, and serve as a technology platform for the development of light-emitting power integrated circuits (LEPICs). LEPICs can also play an important role in adding functionalities required for emerging solid state lighting applications such as visible light communication (VLC) and other LED control technologies required for future smart lighting applications. 5

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confidence: 99%

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Waldron

Detchprohm

et al. 2013

Applied Physics Letters

104

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“…If all the LEDs are connected in series (LED string), the main problem is that the failure of just one LED may affect the whole string if the LED fails in open circuit. If the same number of LEDs is connected as several strings in parallel, the main problem is that a way of equalizing the current [13] through each string has to be used (i.e. : connecting all the strings to the same voltage without equalization, as shown in Fig.…”

Section: Driving Techniques Flickering and Led Arrangementsmentioning

confidence: 99%

An Overview of the AC-DC and DC-DC Converters for LED Lighting Applications

2012

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Original scientific paperHigh-Brightness Light Emitting Diodes (HB-LEDs) are considered the future trend in lighting not only due to their high efficiency and high reliability, but also due to their other outstanding characteristics: chromatic variety, shock and vibration resistance, etc. Nevertheless, they need the development of new power supplies especially designed for boosting and taking advantage of their aforementioned characteristics. Besides, their behaviour is completely different from the rest of lighting devices and, consequently, it should be also taken into account in the design of the converters used to drive them. As a result, many well-known topologies have been optimized or redesigned in order to be used in LED-lighting applications and many new topologies have come up in the recent years with the same purpose.In this paper, the main HB-LED characteristics will be explained, highlighting how they influence the design of their power supplies. After, the main topologies will be presented from the simplest to the most complex ones, analysing their advantages and disadvantages. Key words: AC-DC converters, DC-DC converters, LED, LightingPregled AC-DC i DC-DC pretvarača za primjene u LED rasvjeti. Svjetleće diode s visokom razinom svjetline (HB-LED) smatraju se budućim trendom u rasvjeti zahvaljujući ne samo visokom stupnju efikasnosti i pouzdanosti, nego i njihovim izvanrednim svojstvima: raznolikost boja, otpornost na udarce i vibracije i sl. Ipak, s ciljem potpunog iskorištenja prethodno spomenutih svojstava, potrebno je razviti nove, posebno osmišljene izvore napajanja. Osim toga, ponašanje im se posve razlikuje od ostalih tipova rasvjete što je potrebno uzeti u obzir pri projektiranju pretvarača za njihovo napajanje. Kao posljedica toga, mnoge su poznate topologije pretvarača optimirane ili preoblikovane posebno za primjenu u LED rasvjeti, a zadnjih nekoliko godina mnoge nove su se tek pojavile.U ovomčlanku objašnjena su osnovna HB-LED svojstva naglašavajući njihov utjecaj na razvoj izvora napajanja. Uz to, prikazane su osnovne topologije, od najjednostavnijih do najsloženijih, ujedno analizirajući prednosti i nedostatke pojedinih.

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“…Final comments are concluded in Section 5. LED current balancing mainly uses a PWM duty cycle control, such as sequential phase-shift duty control [12,13], burst mode [14,15], self-adaptive control [16], and series-connected mode [17], etc. In this case, the LED driven by the pulse to emit luminance for a human is based on the persistence of vision.…”

Section: Introductionmentioning

confidence: 99%

“…In spite of the fact that the mentioned current balance strategies are available, an uncertainty of the balance between the adjacent string LEDs always exists, mainly due to temperature variation and the dimming process. Further, the cost-effective way to perform a large scale lighting display is by using a shunt current balance configuration by linear current regulators (LCR) with a single voltage source [13,18]. Above all, the MOSFET of LCR may dissipate more conduction loss, due to an uncertain drain-to-source voltage on the iDS-vDS plane [19].…”

Section: Introductionmentioning

confidence: 99%

LED Current Balance Using a Variable Voltage Regulator with Low Dropout vDS Control

Hsieh

Wang

2017

Applied Sciences

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A cost-effective light-emitting diode (LED) current balance strategy using a variable voltage regulator (VVR) with low dropout v DS control is proposed. This can regulate the multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) of the linear current regulators (LCR), maintaining low dropout v DS on the flat v GS -characteristic curves and making all drain currents almost the same. Simple group LCRs respectively loaded with a string LED are employed to implement the theme. The voltage VV dc from a VVR is synthesized by a string LED voltage Nv D , source voltage v R , and a specified low dropout v DS = V Q . The VV dc updates instantly, through the control loop of the master LCR, which means that all slave MOSFETs have almost the same biases on their flat v GS -characteristic curves. This leads to all of the string LED currents being equal to each other, producing an almost even luminance. An experimental setup with microchip control is built to verify the estimations. Experimental results show that the luminance of all of the string LEDs are almost equal to one another, with a maximum deviation below 1% during a wide dimming range, while keeping all v DS of the MOSFETs at a low dropout voltage, as expected.

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A High-Efficiency Dimmable LED Driver for Low-Power Lighting Applications

Cited by 400 publications

References 23 publications

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

An Overview of the AC-DC and DC-DC Converters for LED Lighting Applications

LED Current Balance Using a Variable Voltage Regulator with Low Dropout vDS Control

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