Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Abstract

We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration of layers typical for a GaN-based LED grown directly on top of the layers of a GaN-based HEMT. The layers were then fabricated into a serially connected pair of GaN LED and metal-oxide-semiconductor-gated 0.3 lm-channel HEMT by exposing the LED/HEMT epitaxial layers in selective area etching. The resulting monolithically integrated circuit shows a full gate voltage modulation of the light output power. This demonstrates compatibility of group-III nitride LED and HEMT processes. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4807125]GaN-based high-power light-emitting diodes (LEDs) used in lighting applications typically require dedicated electronic driver circuits for AC-DC power conversion, current sourcing, and dimming using pulse-width modulation (PWM) or analog current control methods. 1 GaN power switching field-effect transistors (FETs), such as metaloxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSCHEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, 2-4 and can be very useful as output devices for emerging applications of high power-high voltage LED systems. Ultimately, monolithic integration of GaN-based LEDs and GaN power HEMTs can reduce the cost and the size of solid state lighting systems, improve system reliability, and serve as a technology platform for the development of light-emitting power integrated circuits (LEPICs). LEPICs can also play an important role in adding functionalities required for emerging solid state lighting applications such as visible light communication (VLC) and other LED control technologies required for future smart lighting applications. 5

P‐9.2: GaN HEMT‐LED Homogeneous Integration for Micro‐LED Mass Transferring

“…In 2013, the Li [4] of Rensselaer Polytechnic Institute proposed one of the basic and typical designs of LED based HEMT. The device is a monolithic integrated transistor based on the high electron mobility of light-emitting diodes and power metal oxide semiconductor channels.…”

Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

“…Furthermore, monolithic integration of III-nitride HEMTs and LEDs on a common platform can effectively reduce undesirable parasitics, thereby enhancing the power efficiency of the driving circuits. To date, Li et al [2] have reported the growth of GaN-based LEDs on HEMTs, and selective removal of the LED-epi was performed for device integration. However, the LED performance was much inferior to that of discrete devices, probably due to the use of an un-optimized growth scheme on HEMTs.…”

Optoelectronic devices on AlGaN/GaN HEMT platform

“…There are attempts to grow the pn‐junction light‐emitting diode (LED) and heterojunction HEMT structures on a same wafer . The main purpose of this integration scheme is to provide on‐chip electrical control of the LED for compact lighting systems.…”