A heterojunction bipolar transistor large-signal model for high power microwave applications

Samelis, A.; Pavlidis, D.

doi:10.1109/mwsym.1995.406193

Cited by 11 publications

(2 citation statements)

References 12 publications

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“…Several large signal extraction works have been done in the past years [6][7][8][9][10]. However most of them are based on signal analysis method such as: harmonic balance or series analysis, which have no much concern of the physical elements in the model.…”

Section: Introductionmentioning

confidence: 99%

A Large Signal Model to Improve Linearity of Rf Power Amplifier

Hu¹,

Shi

2014

AMM

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Hetero-junction Bipolar Transistors (HBTs) have become very promising devices for power amplifier design in different communication applications. This paper proposes an analytical large signal model to predict nonlinear behavior of InGaP/GaAs HBT. The proposed model is directly fitted from linear model elements using Fourier transfer functions. As a consequence, the proposed large signal model shows good insight of circuit nonlinear behavior, and can be used to analysis large signal parameters of power amplifier. Based on the proposed large signal model, power gain and phase variation of an emitter follower amplify stage under different bias conditions have been analyzed. The calculated results show that: both gain and phase properties exhibit reverse deviation in saturation compared with that in forward amplify region, and can be used to maximize the linearity of power amplifier.

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Section: Introductionmentioning

confidence: 99%

A Large Signal Model to Improve Linearity of Rf Power Amplifier

Hu¹,

Shi

2014

AMM

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“…A physical small signal model was extracted from cold and hot S-parameter measurements [8]. Moreover DC and multi-bias S-parameter data were used to model the transistor under large-signal operation [9].…”

Section: Design Of the Transimpedance Amplifiermentioning

confidence: 99%

High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

Mohammadi

Park²,

Pavlidis³

et al.

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

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A self-aligned GaInF'/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (SZJ of 18.8 dB with a bandwidth of 13.5 GHz and input, output matching better than -8 dB. The am lifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 2 -1 pseudo-random bit sequence with a BER ofThe noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.

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