Abstract:Hetero-junction Bipolar Transistors (HBTs) have become very promising devices for power amplifier design in different communication applications. This paper proposes an analytical large signal model to predict nonlinear behavior of InGaP/GaAs HBT. The proposed model is directly fitted from linear model elements using Fourier transfer functions. As a consequence, the proposed large signal model shows good insight of circuit nonlinear behavior, and can be used to analysis large signal parameters of power amplifi… Show more
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