2012
DOI: 10.1002/adma.201104717
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A Graphite‐Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å

Abstract: The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.

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Cited by 22 publications
(14 citation statements)
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“…8 A. 15 Although graphene is versatile in several areas, such as electronic, magnetic, electrochemical and bio-sensing applications, 16 it remains totally unexplored in the field of optoelectronic devices due to its very poor optical properties. 17a-c Generally, the photoluminescence (PL) in carbon based nanomaterials arises due to the formation of isolated poly-aromatic structures or passivated surface defects.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…8 A. 15 Although graphene is versatile in several areas, such as electronic, magnetic, electrochemical and bio-sensing applications, 16 it remains totally unexplored in the field of optoelectronic devices due to its very poor optical properties. 17a-c Generally, the photoluminescence (PL) in carbon based nanomaterials arises due to the formation of isolated poly-aromatic structures or passivated surface defects.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10][11][12][13][14] To overcome the limitations of the low ON/OFF ratio in a graphene based transistor due to its zero gap property, in the previous work, we have reported a new crystalline intercalated structure with an interlayer separation of 2.8 A. 15 Although graphene is versatile in several areas, such as electronic, magnetic, electrochemical and bio-sensing applications, 16 it remains totally unexplored in the field of optoelectronic devices due to its very poor optical properties. 17a-c Generally, the photoluminescence (PL) in carbon based nanomaterials arises due to the formation of isolated poly-aromatic structures or passivated surface defects.…”
Section: Introductionmentioning
confidence: 99%
“…[11][12][13] Compared with traditional inorganic semiconductor QDs, CQDs with superior photostability and lower cytotoxicity have shown exceptional performance in bio-applications, especially in sensors. [14][15][16] During the last few years graphene quantum sheets and functionalized graphene based materials are used for studying different functional properties, [17][18][19] selective detection of nitro explosive 20 and adsorption of toxic metal ions (As, Hg, Cr etc.) from waste water.…”
Section: Introductionmentioning
confidence: 99%
“…As predicted long ago, 53 oxygenintercalated AB-graphite was recently shown to be a zero indirect gap semiconductor. 54 Gray tin (α-Sn) is known as a zero-gap semiconductor having the diamond structure, 55 and a report on Ni(tmdt) 2 (tmdt = trimethylenetetrathiafulvalenedithiolate), may also be related to this property. 56 Figure 10.…”
Section: Electronic Properties Of Graphitynesmentioning
confidence: 98%