A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

Schröter, M.; Morlock, Friedrich; Rein, H.-M.

doi:10.1109/16.239746

Cited by 42 publications

(10 citation statements)

References 22 publications

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“…Physically based models help accurately match the device characteristics across all conditions. Bipolar compact models (VBIC95 [20], HiCUM [21], or MEXTRAM) have a long history of RF/Analog use, are physically based and developed with noise and large signal simulation in mind. FET devices and models were initially developed with digital applications in mind and are only now being optimized for RF/Analog.…”

Section: Ibm R F /A Design Methodologymentioning

confidence: 99%

Imagine the Future in Telecommunications Technology

Harame

Joseph

Coolbaugh

et al. 2002

32nd European Solid-State Device Research Conference

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The wired (networking) and wireless telecommunications areas are rapidly expanding in applications and data rates. This drives a need for highly complex RF/Analog and Mixed Signal products. SiGe BiCMOS and RF CMOS are the two technologies that are capable of fulfilling the technology requirements for these products. The active and passives device suite is described. The application areas for Bipolar and CMOS are discussed. SiGe BiCMOS products examples are given.

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Section: Ibm R F /A Design Methodologymentioning

confidence: 99%

Imagine the Future in Telecommunications Technology

Harame

Joseph

Coolbaugh

et al. 2002

32nd European Solid-State Device Research Conference

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show abstract

“…The HiCUM (High CUrrent transistor Model), developed at Ruhr University in Bochum, Germany, and first implemented in 1981, was developed initially for design of high-speed ECL circuits that operate at high current densities [27]. Based on the ICCR, the model was extended to include SiGe HBT structures with the General Integral Charge-Control Relation (GICCR) that now provides the physical basis for the model [28]. A most important impact of the GICCR is…”

Section: Hbtmentioning

confidence: 99%

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies

et al. 2003

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The rapidly expanding telecommunications market has led to a need for advanced rf integrated circuits. Complex rf-and mixed-signal system-on-chip designs require accurate prediction early in the design schedule, and time-to-market pressures dictate that design iterations be kept to a minimum. Signal integrity is seen as a key issue in typical applications, requiring very accurate interconnect transmission-line modeling and RLC extraction of parasitic effects. To enable this, IBM has in place a mature project infrastructure consisting of predictive device models, complete rf characterization, statistical and scalable compact models that are hardware-verified, and a robust design automation environment. Finally, the unit and integration testing of all of these components is performed thoroughly. This paper describes each of these aspects and provides an overview of associated development work.

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“…The derivation of the GICCR [167] starts from (3.35), which is written as The derivation of the GICCR [167] starts from (3.35), which is written as…”

Section: Modeling Approachmentioning

confidence: 99%

“…where "VE'E' and VE'C' are the base-emitter and base-collector voltage, respectively, but with the influence of the voltage drop across the emitter and collector contact resistance, as well as the base resistance being eliminated" [167].…”

Section: Modeling Approachmentioning

confidence: 99%

“…With these relations, (3.254) transforms into the "generalized integral charge control relation" [167] iT(t) The minority charges qTE and qTC stored in the emitter and collector regions are now defined according to while is represented as the sum of the zero-bias base charge Qpo, the charges q,JE and q.JC stored in the internal eb depletion capacitances, and the minority charge qTB stored in the neutral base region.…”

Section: Modeling Approachmentioning

confidence: 99%

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Physics and Modeling of Bipolar Junction Transistors

Reisch

2003

High-Frequency Bipolar Transistors

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Physics-based compact models provide insight into the relations between the layout, doping profiles and electrical parameters and therefore form a language for communication between process development and circuit design. This chapter looks at the physics of modern integrated bipolar junction transistors with particular emphasis on the derivation of closed-form expressions for their terminal behavior, which are required for the formulation of compact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.

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A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

Cited by 42 publications

References 22 publications

Imagine the Future in Telecommunications Technology

Imagine the Future in Telecommunications Technology

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies

Physics and Modeling of Bipolar Junction Transistors

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