A general model of the CMOS buried double junction photodetector

Haned, F.; Vasilescu, G.; Chouikha, Mohamed Ben; Sou, Gérard; Hanna, Victor Fouad; Alquié, G.

doi:10.1109/ist.2004.1397283

Cited by 2 publications

(11 citation statements)

References 7 publications

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“…The most important are the diffusion process, the thermal generation of carriers (Shockley-Read-Hall model), the Band-to-Band Tunnelling (BBT), the Trap-Assisted Tunnelling (TAT) and the impact ionization [17-20, 22, 23, 26, 39, 50-52]. The contributions of these processes depend on the technological and geometrical parameters of the device, the temperature and the bias conditions.…”

Section: The Bdj Photodetector Devicementioning

confidence: 99%

“…The observed BBT effect on J 1 is predictable, because this junction is built with a heavily doped P + -diffusion layer. Finally, both dark currents of the BDJ detector can be expressed as [17-20]:

I_{d c 1} = A_{j 1} false(J_{g 1} + J_{d 1} + J_{t 1} false)

I_{d c 2} = A_{j 2} false(J_{g 2} + J_{d 2} false)

where A j1 and A j2 are the areas of junctions J 1 and J 2; J g1 and J g2 denote the thermal generation current densities; J d1 and J d2 correspond to the diffusion (dark) current densities of J 1 and J 2; J t1 is the BBT current density of J 1 .…”

Section: The Bdj Photodetector Devicementioning

confidence: 99%

“…A general SPICE model of the BDJ photodetector was proposed for large-, small-signal operations and noise analysis [10, 17-20, 53-55]. An overview is presented in this section, together with its implementation in CAD tools.…”

Section: Bdj Spice Modelmentioning

confidence: 99%

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A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Feruglio

Garda

et al. 2008

Sensors

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A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

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Section: The Bdj Photodetector Devicementioning

confidence: 99%

I_{d c 1} = A_{j 1} false(J_{g 1} + J_{d 1} + J_{t 1} false)

I_{d c 2} = A_{j 2} false(J_{g 2} + J_{d 2} false)

Section: The Bdj Photodetector Devicementioning

confidence: 99%

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A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Feruglio

Garda

et al. 2008

Sensors

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“…When a radiation is incident on the detector surface, the current flowing through each junction has two components as follows [3][4][5][6][7]10]:…”

Section: Bdj Structurementioning

confidence: 99%

“…As can be explained by the Shockley-Read-Hall (SHR) generation-recombination (G-R) mechanism, for reverse-biased junctions, generation overrides recombination. In this bias condition and under the maximum generation-rate approximation, the analytic expression of I gr (which holds for both junctions) is given by [5][6][7][8][9][10][11][12]:…”

Section: Bdj In Obscuritymentioning

confidence: 99%

Modelling of the CMOS buried double-junction photodetector

Hanna¹,

Alquié²,

Vasilescu³

2005

Microw. Opt. Technol. Lett.

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fixed as ⌬t ϭ 0.5⌬z/c. Then the 2 nd -order Liao's T2 ABC is applied in the lower boundary where the material is air and the 2 nd -order Liao's T3 ABC is applied in the upper boundary where the material is glass, with a refractive index of 1.5.The stability criterion for the hybrid algorithm is given by Eq. (7), but Liao's ABC requires ⌬t ϭ 0.5⌬z/c. In general, if we assume ⌬x ϭ ⌬y, then we can obtain the following stability criterion for using Liao's ABC: ⌬x ϭ ⌬y Ն ⌬z ͱ6 Ϸ 1.283⌬z.This is generally satisfied since, in the x and y directions, a lower sampling rate is usually used to take the advantage of the PSTD algorithm.Because we use Fourier PSTD with a uniform grid in the x and y directions, the hybrid algorithm in this paper requires that the material contrast in the x and y directions is not too large. Otherwise, the severe Gibbs phenomenon will contaminate the simulation results. In our numerical experiments, we found that when skin depth of the absorbing layer is very small, in which the case Gibbs phenomenon is sure to appear, there are fairly large differences in the field values obtained via the hybrid method and those obtained via FDTD with smaller grid size (see Fig. 7). Here we propose several possible remedies for high-contrast materials and good conductors, if they are included in the computation domain: (i) If the object geometry is rectangular on the mask surface, we can use the mapped PSTD along the x and y directions to help reduce the magnitude of the Gibbs phenomenon in the mapped space [12,14]; (ii) if the object geometry is not rectangular but can be handled with multidomain PSTD, we suggest using multidomain PSTD in the x and y directions; (iii) use regular Fourier PSTD for the x and y directions and then apply a low-pass filter to the final steady-state results contaminated by the Gibbs phenomenon. This may help restore the global exponential convergence property of the PSTD algorithm. We expect to see more progress in these areas in the near future. CONCLUSIONIn this paper, we have applied a hybrid PSTD-FDTD algorithm for electrically large thin-plate problems. We adopted FDTD along the vertical direction of the thin plate and PSTD along the horizontal directions. This arrangement can combine the advantages of both the FDTD and PSTD algorithms. As an example application, we studied the near-field scattering of a photo mask, and the hybrid algorithm was shown to offer large savings in memory usage and computation time, as compared with the FDTD method.

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A general model of the CMOS buried double junction photodetector

Cited by 2 publications

References 7 publications

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Modelling of the CMOS buried double-junction photodetector

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