A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub />
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Zhang, Zhuocheng; Lin, Zehao; Liao, Pai-Ying; Askarpour, Vahid; Dou, Hongyi; Shang, Zhongxia; Charnas, Adam; Si, Mengwei; Alajlouni, Sami; Shakouri, Ali; Wang, Haiyan; Lundstrom, Mark; Maassen, Jesse; Ye, Peide D.

doi:10.1109/led.2022.3210005

Cited by 20 publications

(12 citation statements)

References 16 publications

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“…Additionally, the V TH value was −0.22 ± 0.08 V, with an SS of 69.2 ± 3.3 mV/decade, and drivability characteristics within ±1 V were observed. Several factors can contribute to achieving these superior features, including excellent PEALD-derived In 2 O 3 film quality, optimal thickness (5 nm) selection for In 2 O 3 to maximize the percolation efficiency, and utilization of a HfO 2 gate oxide with high capacitance (κ ≈ 10). ,, As shown in Figure S4 (Supporting Information), it is evident that the HfO 2 insulating layer maintains a remarkably smooth surface property ( R rms < 0.3 nm) even after crystallization following annealing at 400 °C. This observation suggests a successful crystal–crystal interface matching with In 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors

Lee,

Hur,

Cho

et al. 2023

ACS Appl. Mater. Interfaces

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Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of In2O3 films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)propyl)-dimethyl indium (DADI) and (N,N-dimethylbutylamine)trimethylindium (DATI). DATI-derived In2O3 films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived In2O3 films. Density functional theory calculations revealed that the structure of DATI can exhibit less steric hindrance compared with that of DADI, explaining the superior physical and electrical properties of the DATI-derived In2O3 film. DATI-derived In2O3 field-effect transistors (FETs) exhibited unprecedented performance, showcasing a high field-effect mobility of 115.8 cm2/(V s), a threshold voltage of −0.12 V, and a low subthreshold gate swing value of <70 mV/decade. These results were achieved by employing a 10-nm-thick HfO2 gate dielectric layer with an effective oxide thickness of 3.9 nm. Both DADI and DATI-derived In2O3 FET devices exhibited remarkable stability under bias stress conditions due to a high-quality In2O3 channel layer, good gate dielectric/channel interface matching, and a suitable passivation layer. These findings underscore the potential of ALD In2O3 films as promising materials for upper-layer channels in the next generation of M3D devices.

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Section: Resultsmentioning

confidence: 99%

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors

Lee,

Hur,

Cho

et al. 2023

ACS Appl. Mater. Interfaces

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“…Recently, the dimensional part of the transistor has become one of the important factors to compare the transistor with conventional transistors. It defined current normalization in conventional transistors such as metal-oxide-semiconductor field effect transistors (MOSFET) and thin film transistors (TFT). ,− Because the current flows follow the electric field (or potential) in the channel. It is affected by the length or distance of the source, drain, and gate electrode.…”

Section: Resultsmentioning

confidence: 99%

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

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“…Scaling the channel width can offer even further improvements. [113][114][115] However, device engineering alone does not explain the results: simultaneously high carrier density and velocity are key.…”

Section: Ultra-high Currentmentioning

confidence: 99%

Review—Extremely Thin Amorphous Indium Oxide Transistors

Charnas,

Zhang,

Lin

et al. 2023

Advanced Materials

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Amorphous oxide semiconductor transistors have been a mature technology in display panels for upwards of a decade, and have recently been considered as promising back‐end‐of‐line (BEOL) compatible channel materials for monolithic 3D applications. However, achieving high‐mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long‐standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement‐mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, we review the history leading to the re‐emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state‐of‐the‐art indium oxide device research, and the bias stability of the devices.This article is protected by copyright. All rights reserved

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A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

Cited by 20 publications

References 16 publications

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Review—Extremely Thin Amorphous Indium Oxide Transistors

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A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

Cited by 20 publications

References 16 publications

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Review—Extremely Thin Amorphous Indium Oxide Transistors

Contact Info

Product

Resources

About

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors