A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications

Green, B.M.; Henry, H.G.; Selbee, J.; Lawrence, R.K.; Moore, Karen; Abdou, J.; Miller, M.

doi:10.1109/mwsym.2006.249731

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…Furthermore, Class-E power amplifier performance (Pout, PAE) can be controlled accurately by applying a programmable dc power supply, thus enabling prime power control while maintaining different levels of radar operational capabilities. GaN HEMTs have shown enormous potential for realizing high power HPAs due to their characteristics of wide bandgap materials such as high breakdown field, high electron saturation velocity and high operating temperature [5][6]. These desirable GaN HEMT properties are critical enabling features for the implementation of advanced class-E HPAs having highly efficient and reliable performance over a broad frequency bandwidth.…”

Section: Introductionmentioning

confidence: 99%

A Spectrally pure 5.0 W, High PAE, (6-12 GHz) GaN Monolithic Class E Power Amplifier for Advanced T/R Modules

Tayrani

2007

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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This paper introduces a new highly efficient broadband monolithic class-E power amplifier utilizing a single 0.25 um x 800 um AlGaN/GaN field-plated HEMT producing 8 W/mm of power at 10.0 GHz. The HPA utilizes a novel distributed broadband class-E load topology to maintain a simultaneous high PAE and output Power over (6-12 GHz). The HPA's peak PAE and output power performance measured under three pulsed drain voltages at 7.5 GHz are: (67%, 36.8 dBm @ 20 V), (64%, 37.8 dBm @ 25 V) and (58%, 38.3 dBm @ 30 V). The new broadband load also provides a spectrally pure output power response under CW and pulsed modulated RF input conditions. The HPA spurious free performance is evident from its low AM and PM noise figures of <-125 dBc at 10 KHz from carrier and <-130 dBc at 15 KHz from 10 GHz respectively. To the best of our knowledge, this is the highest ever reported performance for a high power, 6-12 GHz GaN class-E power amplifier.

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Section: Introductionmentioning

confidence: 99%

A Spectrally pure 5.0 W, High PAE, (6-12 GHz) GaN Monolithic Class E Power Amplifier for Advanced T/R Modules

Tayrani

2007

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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“…[5,6,7,8] These results show that GaN is comparable to the incumbent LDMOS technology, however, these operating conditions do not fully leverage the advantages of GaN based devices.…”

Section: Introductionmentioning

confidence: 99%

Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide

Brown¹,

Lee²,

Lieu³

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

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Gallium Nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high operating voltage, this technology may also be suited for applications that utilize modulation of the drain voltage to improve overall amplifier efficiency. RFMD has developed a GaN HEMT technology platform on semi-insulating SiC substrates. This technology includes a 0.5pm gate process and advanced field plate designs to maximize device performance. We report on devices from this technology, operated over a range of drain bias conditions. Performance and reliability results illustrate the compatibility of this device technology for high voltage and variable voltage applications.

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High‐Voltage Power Amplifier Design

Bahl

2008

Fundamentals of RF and Microwave Transistor Amplifiers

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A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications

Cited by 6 publications

References 3 publications

A Spectrally pure 5.0 W, High PAE, (6-12 GHz) GaN Monolithic Class E Power Amplifier for Advanced T/R Modules

A Spectrally pure 5.0 W, High PAE, (6-12 GHz) GaN Monolithic Class E Power Amplifier for Advanced T/R Modules

Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide

High‐Voltage Power Amplifier Design

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